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Part Details for NVMFS5C460NLAFT1G-YE by onsemi
Results Overview of NVMFS5C460NLAFT1G-YE by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NVMFS5C460NLAFT1G-YE Information
NVMFS5C460NLAFT1G-YE by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS5C460NLAFT1G-YE
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
488-NVMFS5C460NLAFT1G-YE-ND
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DigiKey | SINGLE N-CHANNEL POWER MOSFET 40 Lead time: 19 Weeks Container: Bulk | Limited Supply - Call |
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Buy Now | |
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Flip Electronics | Stock | 10500 |
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RFQ |
Part Details for NVMFS5C460NLAFT1G-YE
NVMFS5C460NLAFT1G-YE CAD Models
NVMFS5C460NLAFT1G-YE Part Data Attributes
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NVMFS5C460NLAFT1G-YE
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFS5C460NLAFT1G-YE
onsemi
Single N-Channel Power MOSFET 40V, 78A, 4.5mΩ Power MOSFET 40V 78A 4.5mOhm Single N-Channel SO-8FL, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SO-8FL / DFN-5 | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | not_compliant | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 107 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 78 A | |
| Drain-source On Resistance-Max | 0.0072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 396 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |