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Part Details for NVMFS5C456NLAFT1G by onsemi
Results Overview of NVMFS5C456NLAFT1G by onsemi
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVMFS5C456NLAFT1G Information
NVMFS5C456NLAFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS5C456NLAFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42AC1010
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Newark | T6 40V Nch Ll In S08Fl/ Reel Rohs Compliant: Yes |Onsemi NVMFS5C456NLAFT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6710 / $0.8870 | Buy Now |
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DISTI #
488-NVMFS5C456NLAFT1GCT-ND
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DigiKey | MOSFET N-CH 40V 87A 5DFN Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
400 In Stock |
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$0.6298 / $1.8500 | Buy Now |
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DISTI #
NVMFS5C456NLAFT1G
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Avnet Americas | Power MOSFET Single N-Channel 40 V 87 A 3.7m Ohm 5-Pin DFN T/R - Tape and Reel (Alt: NVMFS5C456NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.6046 / $0.6172 | Buy Now |
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DISTI #
863-NVMFS5C456NLAF1
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Mouser Electronics | MOSFETs T6 40V NCH LL IN U8FL RoHS: Compliant | 17203 |
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$0.6540 / $1.8100 | Buy Now |
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Onlinecomponents.com | Single N-Channel Power MOSFET 40V, 87A, 3.7mΩ Power MOSFET 40V 87A 3.7mOhm Single N-Channel SO-8FL RoHS: Compliant | 0 |
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$0.6100 / $0.7200 | Buy Now |
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DISTI #
NVMFS5C456NLAFT
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 | 0 |
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$0.6300 | Buy Now |
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DISTI #
NVMFS5C456NLAFT1G
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Avnet Silica | Power MOSFET Single NChannel 40 V 87 A 37m Ohm 5Pin DFN TR (Alt: NVMFS5C456NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NVMFS5C456NLAFT1G
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EBV Elektronik | Power MOSFET Single NChannel 40 V 87 A 37m Ohm 5Pin DFN TR (Alt: NVMFS5C456NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NVMFS5C456NLAFT1G
NVMFS5C456NLAFT1G CAD Models
NVMFS5C456NLAFT1G Part Data Attributes
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NVMFS5C456NLAFT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFS5C456NLAFT1G
onsemi
Single N-Channel Power MOSFET 40V, 87A, 3.7mΩ Power MOSFET 40V 87A 3.7mOhm Single N-Channel SO-8FL, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SO-8FL / DFN-5 | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Date Of Intro | 2017-02-24 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 202 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 87 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 21 pF | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 55 W | |
| Pulsed Drain Current-Max (IDM) | 520 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for NVMFS5C456NLAFT1G
This table gives cross-reference parts and alternative options found for NVMFS5C456NLAFT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVMFS5C456NLAFT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NVMFS5C456N | onsemi | Check for Price | Power Field-Effect Transistor | NVMFS5C456NLAFT1G vs NVMFS5C456N |
NVMFS5C456NLAFT1G Frequently Asked Questions (FAQ)
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The recommended operating voltage range for NVMFS5C456NLAFT1G is 2.7V to 3.6V.
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To ensure data integrity, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
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The NVMFS5C456NLAFT1G supports up to 100,000 erase cycles.
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Page erase and program operations should be performed using the recommended algorithms and timing specifications outlined in the datasheet to ensure reliable operation.
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The recommended storage temperature range for NVMFS5C456NLAFT1G is -40°C to 125°C.