-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for NVMFS5C430NLAFT1G by onsemi
Results Overview of NVMFS5C430NLAFT1G by onsemi
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVMFS5C430NLAFT1G Information
NVMFS5C430NLAFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS5C430NLAFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
54AH9529
|
Newark | Mosfet, N-Ch, 40V, 200A, 175Deg C, 110W Rohs Compliant: Yes |Onsemi NVMFS5C430NLAFT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1582 |
|
$2.7300 | Buy Now |
|
DISTI #
31AC1131
|
Newark | T6 40V Nch Ll In So8Fl/ Reel Rohs Compliant: Yes |Onsemi NVMFS5C430NLAFT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.1600 / $1.4800 | Buy Now |
|
DISTI #
488-NVMFS5C430NLAFT1GCT-ND
|
DigiKey | MOSFET N-CH 40V 38A/200A 5DFN Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1060 In Stock |
|
$1.1270 / $3.4000 | Buy Now |
|
DISTI #
NVMFS5C430NLAFT1G
|
Avnet Americas | Power MOSFET, N Channel, 40 V, 200 A, 0.0012 ohm, DFN, Surface Mount - Tape and Reel (Alt: NVMFS5C430NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$1.0560 / $1.0819 | Buy Now |
|
DISTI #
863-NVMFS5C430NLFT1G
|
Mouser Electronics | MOSFETs T6 40V NCH LL IN SO8FL | 690 |
|
$1.1200 / $3.3400 | Buy Now |
|
|
Future Electronics | MOSFET T6 40V NCH LL IN SO8FL RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks Container: Reel | 1500Reel |
|
$1.2000 / $1.2100 | Buy Now |
|
|
Onlinecomponents.com | Mosfet, N-Ch, 40V, 200A, 175Deg C, 110W Rohs Compliant: Yes |Onsemi NVMFS5C430NLAFT1G RoHS: Compliant | 0 |
|
$1.1000 / $2.3100 | Buy Now |
|
DISTI #
78979029
|
Verical | Trans MOSFET N-CH 40V 38A Automotive AEC-Q101 5-Pin SO-FL EP T/R Min Qty: 1500 Package Multiple: 1500 Date Code: 2331 | Americas - 1500 |
|
$1.8898 | Buy Now |
|
|
Future Electronics | MOSFET T6 40V NCH LL IN SO8FL Min Qty: 1500 Package Multiple: 1500 |
1500 null |
|
$1.2000 / $1.2100 | Buy Now |
|
DISTI #
NVMFS5C430NLAFT1G
|
TME | Transistor: N-MOSFET, unipolar, 40V, 140A, Idm: 900A, 53W, DFN5x6 Min Qty: 1 | 0 |
|
$1.4400 / $2.1500 | RFQ |
Part Details for NVMFS5C430NLAFT1G
NVMFS5C430NLAFT1G CAD Models
NVMFS5C430NLAFT1G Part Data Attributes
|
|
NVMFS5C430NLAFT1G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NVMFS5C430NLAFT1G
onsemi
Single N-Channel Power MOSFET 40V, 200A, 1.4mΩ Power MOSFET 40 V, 1.5 mohm, 200 A, Single N-Channel, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SO-8FL / DFN-5 | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Date Of Intro | 2017-02-24 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 493 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain-source On Resistance-Max | 0.0022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NVMFS5C430NLAFT1G Frequently Asked Questions (FAQ)
-
The recommended operating temperature range for NVMFS5C430NLAFT1G is -40°C to 125°C.
-
To ensure data integrity and prevent data corruption during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
-
The NVMFS5C430NLAFT1G supports up to 100,000 erase cycles.
-
Yes, NVMFS5C430NLAFT1G is suitable for high-reliability applications due to its high-quality manufacturing process and rigorous testing procedures.
-
In case of page erase or programming errors, it is recommended to retry the operation up to a maximum of 3 times. If the error persists, the device should be reset and the operation retried.