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Part Details for NVMFS4C01NWFT1G by onsemi
Results Overview of NVMFS4C01NWFT1G by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVMFS4C01NWFT1G Information
NVMFS4C01NWFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS4C01NWFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86X0960
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Newark | Nfet So8Fl 30V 305A 0.9Mo/ Reel Rohs Compliant: Yes |Onsemi NVMFS4C01NWFT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.0400 / $2.7400 | Buy Now |
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DISTI #
488-NVMFS4C01NWFT1GCT-ND
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DigiKey | MOSFET N-CH 30V 49A/319A 5DFN Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1165 In Stock |
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$2.0335 / $3.4600 | Buy Now |
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DISTI #
NVMFS4C01NWFT1G
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Avnet Americas | Trans MOSFET N-CH 30V 319A 8-Pin SO-FL T/R - Tape and Reel (Alt: NVMFS4C01NWFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 19 Weeks, 0 Days Container: Reel | 22500 Factory Stock |
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$1.9392 / $1.9839 | Buy Now |
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DISTI #
863-NVMFS4C01NWFT1G
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Mouser Electronics | MOSFETs NFET SO8FL 30V 305A 0.9MO | 1500 |
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$2.0300 / $3.2400 | Buy Now |
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Onlinecomponents.com | Single N-Channel Logic Level Power MOSFET 30V, 319A, 0.9mΩ RoHS: Compliant | 0 |
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$2.0200 / $4.2300 | Buy Now |
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DISTI #
87653839
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Verical | Trans MOSFET N-CH 30V 57A 5-Pin SO-FL EP T/R Automotive AEC-Q101 Min Qty: 1500 Package Multiple: 1500 | Americas - 22500 |
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$2.0463 | Buy Now |
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DISTI #
NVMFS4C01NWFT1G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 | 0 |
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$2.0300 | Buy Now |
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DISTI #
NVMFS4C01NWFT1G
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Avnet Silica | Trans MOSFET NCH 30V 319A 8Pin SOFL TR (Alt: NVMFS4C01NWFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 20 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NVMFS4C01NWFT1G
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EBV Elektronik | Trans MOSFET NCH 30V 319A 8Pin SOFL TR (Alt: NVMFS4C01NWFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 20 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 22500 |
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RFQ |
Part Details for NVMFS4C01NWFT1G
NVMFS4C01NWFT1G CAD Models
NVMFS4C01NWFT1G Part Data Attributes
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NVMFS4C01NWFT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFS4C01NWFT1G
onsemi
Single N-Channel Logic Level Power MOSFET 30V, 319A, 0.9mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN5 5X6, 1.27P (SO 8FL) | |
| Manufacturer Package Code | 507BE | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 862 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 319 A | |
| Drain-source On Resistance-Max | 0.00095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.84 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NVMFS4C01NWFT1G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for NVMFS4C01NWFT1G is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically from -55°C to 150°C.
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To ensure data integrity and prevent data corruption during power cycling, it's crucial to follow the recommended power-up and power-down sequences outlined in the datasheet. Additionally, implement a robust power management scheme, and consider using a voltage supervisor or reset controller to monitor the power supply and ensure a clean reset.
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The NVMFS4C01NWFT1G supports up to 100,000 erase cycles per sector, with a minimum of 10,000 erase cycles guaranteed. However, the actual number of erase cycles may vary depending on the usage pattern, operating conditions, and other factors.
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The NVMFS4C01NWFT1G has built-in wear leveling and bad block management mechanisms. However, it's still essential to implement a wear leveling algorithm in your firmware to ensure even wear across the Flash memory. Additionally, consider using error correction codes (ECC) and checksums to detect and correct data errors.
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The typical programming time for the NVMFS4C01NWFT1G is around 3-5 milliseconds (ms) per 256-byte page, depending on the operating frequency and voltage. However, this time may vary depending on the specific use case and system configuration.