Part Details for NVMFD5877NLWFT3G by onsemi
Results Overview of NVMFD5877NLWFT3G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NVMFD5877NLWFT3G Information
NVMFD5877NLWFT3G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFD5877NLWFT3G
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DISTI #
NVMFD5877NLWFT3G
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Avnet Silica | Transistor MOSFET Array Dual NCH 60V 17A 8Pin DFN TR (Alt: NVMFD5877NLWFT3G) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 150000 |
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RFQ |
Part Details for NVMFD5877NLWFT3G
NVMFD5877NLWFT3G CAD Models
NVMFD5877NLWFT3G Part Data Attributes
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NVMFD5877NLWFT3G
onsemi
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Datasheet
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NVMFD5877NLWFT3G
onsemi
Dual N-Channel Logic Level Power MOSFET 60V, 17A, 39mΩ, DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 5000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual) | |
| Package Description | SO-8FL, DFN-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 506BT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 10.5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 36 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 23 W | |
| Pulsed Drain Current-Max (IDM) | 74 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NVMFD5877NLWFT3G Frequently Asked Questions (FAQ)
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The recommended PCB layout and thermal management for the NVMFD5877NLWFT3G can be found in the onsemi application note AND9173/D, which provides guidelines for thermal design and layout considerations to ensure optimal performance and reliability.
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The NVMFD5877NLWFT3G has an internal overcurrent protection feature, but it's recommended to implement an external overcurrent protection circuit to ensure the device is protected from excessive current. A suitable circuit can be designed using a sense resistor and a comparator, as described in the onsemi application note AND9174/D.
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The recommended soldering profile for the NVMFD5877NLWFT3G can be found in the onsemi packaging document, which provides guidelines for reflow soldering and wave soldering. The recommended peak temperature is 260°C, with a maximum time above 220°C of 60 seconds.
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To ensure EMC with the NVMFD5877NLWFT3G, it's recommended to follow the guidelines outlined in the onsemi application note AND9175/D, which provides information on PCB layout, component selection, and shielding to minimize electromagnetic interference.
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The NVMFD5877NLWFT3G has a controlled power-up and power-down sequence to prevent damage to the device. The device has an internal power-on reset (POR) circuit that ensures the device is in a known state during power-up. The power-down sequence is also controlled to prevent backpowering of the device.