Part Details for NVMFD5873NLT1G by onsemi
Results Overview of NVMFD5873NLT1G by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NVMFD5873NLT1G Information
NVMFD5873NLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFD5873NLT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31AC1104
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Newark | Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn, Msl:Msl 1 - Unlimited, Svhc:No Svhc (12-Jan-2017) Rohs Compliant: Yes |Onsemi NVMFD5873NLT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
NVMFD5873NLT1G
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Avnet Silica | Transistor MOSFET Array Dual NCH 60V 58A 8Pin DFN TR (Alt: NVMFD5873NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NVMFD5873NLT1G
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EBV Elektronik | Transistor MOSFET Array Dual NCH 60V 58A 8Pin DFN TR (Alt: NVMFD5873NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 10500 |
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RFQ |
Part Details for NVMFD5873NLT1G
NVMFD5873NLT1G CAD Models
NVMFD5873NLT1G Part Data Attributes
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NVMFD5873NLT1G
onsemi
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Datasheet
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NVMFD5873NLT1G
onsemi
Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level., DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual) | |
| Package Description | SOP-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 506BT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 107 W | |
| Pulsed Drain Current-Max (IDM) | 190 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NVMFD5873NLT1G Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to ensure efficient heat dissipation.
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Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
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Exceeding the maximum junction temperature can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure that the device is operated within the recommended temperature range to prevent premature failure.
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Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to prevent damage from electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage during manufacturing and assembly.
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When operating multiple devices in parallel, ensure that each device has its own decoupling capacitor and that the PCB is designed to minimize inductive coupling between devices. Also, consider using a common mode choke or other filtering components to reduce electromagnetic interference.