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Single N-Channel Power MOSFET 60V, 38A, 16.5mΩ DPAK 2500 tape and reel, DPAK-3, 2500-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVD5C684NLT4G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
18AC0082
|
Newark | Mosfet, Aec-Q101, N-Ch, 60V, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:38A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0137Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.1V, Power Rohs Compliant: Yes |Onsemi NVD5C684NLT4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.7810 / $1.6500 | Buy Now |
DISTI #
NVD5C684NLT4GOSCT-ND
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DigiKey | MOSFET N-CHANNEL 60V 38A DPAK Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3521 In Stock |
|
$0.6913 / $2.0200 | Buy Now |
DISTI #
NVD5C684NLT4G
|
Avnet Americas | MOS Power Transistors LV ( 41V-100V) - Tape and Reel (Alt: NVD5C684NLT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.6506 / $0.6744 | Buy Now |
DISTI #
863-NVD5C684NLT4G
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Mouser Electronics | MOSFETs T6 60V LL DPAK RoHS: Compliant | 5019 |
|
$0.6950 / $2.0400 | Buy Now |
DISTI #
E02:0323_11454163
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Arrow Electronics | Trans MOSFET N-CH 60V 13A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Date Code: 2418 | Europe - 37500 |
|
$0.7079 | Buy Now |
|
Future Electronics | NVD5C684 Series 60 V 16.5 mOhm 38 A SMT Single N-Channel Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 2500Reel |
|
$0.7950 | Buy Now |
|
Onlinecomponents.com | Single N-Channel Power MOSFET 60V, 38A, 16.5mΩ DPAK 2500 tape and reel RoHS: Compliant | 0 |
|
$0.6900 / $1.0500 | Buy Now |
DISTI #
81710440
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Verical | Trans MOSFET N-CH 60V 13A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2418 | Americas - 37500 |
|
$0.7079 | Buy Now |
DISTI #
88739436
|
Verical | Trans MOSFET N-CH 60V 13A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2513 | Americas - 2500 |
|
$1.0780 | Buy Now |
|
Bristol Electronics | 2400 |
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RFQ |
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NVD5C684NLT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVD5C684NLT4G
onsemi
Single N-Channel Power MOSFET 60V, 38A, 16.5mΩ DPAK 2500 tape and reel, DPAK-3, 2500-REEL, Automotive Qualified
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 | |
Package Description | DPAK-3/2 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain-source On Resistance-Max | 0.0245 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 130 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.
Exceeding the maximum junction temperature can lead to reduced lifespan, decreased performance, and potentially catastrophic failure. It's essential to ensure the device operates within the recommended temperature range.
Yes, the NVD5C684NLT4G is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions, and consider additional testing and validation for specific industry requirements.
Consult the datasheet and application notes for troubleshooting guidelines. Check for proper power supply, thermal design, and signal integrity. Use oscilloscopes or logic analyzers to debug signal issues. If issues persist, contact onsemi support for further assistance.