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MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mΩ, 351 A MOSFET - Power, Single N-Channel, TOLL, 80 V, 1.05 m?Ω, 351 A, TO-LL 8L, 2000-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVBLS1D1N08H by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
91AH8579
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Newark | T8-80V In Toll For Automotive Market/ Reel Rohs Compliant: Yes |Onsemi NVBLS1D1N08H RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$4.1000 | Buy Now |
DISTI #
488-NVBLS1D1N08HCT-ND
|
DigiKey | MOSFET N-CH 80V 41A/351A 8HPSOF Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1026 In Stock |
|
$3.8480 / $7.5900 | Buy Now |
DISTI #
NVBLS1D1N08H
|
Avnet Americas | MOSFET N-Channel 80V TO-LL - Tape and Reel (Alt: NVBLS1D1N08H) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 16 Weeks, 0 Days Container: Reel | 6000 Factory Stock |
|
$3.6216 / $3.7542 | Buy Now |
DISTI #
863-NVBLS1D1N08H
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Mouser Electronics | MOSFETs T8-80V IN TOLL | 3032 |
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$3.8400 / $7.4400 | Buy Now |
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Onlinecomponents.com | Single N-Channel 80 V 1.05 mOhm 166 nC 4.2 W SMT Mosfet - PowerSFN-56 RoHS: Compliant | 0 |
|
$3.9400 / $11.0800 | Buy Now |
DISTI #
87650242
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Verical | Trans MOSFET N-CH 80V 41A 9-Pin(8+Tab) PSOF T/R Automotive AEC-Q101 Min Qty: 2000 Package Multiple: 2000 | Americas - 6000 |
|
$3.8722 | Buy Now |
DISTI #
86123947
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Verical | Trans MOSFET N-CH 80V 41A 9-Pin(8+Tab) PSOF T/R Automotive AEC-Q101 Min Qty: 26 Package Multiple: 1 Date Code: 2301 | Americas - 631 |
|
$14.9125 | Buy Now |
|
Rochester Electronics | NVBLS1D1N08H - N-Channel, MOSFET - Power RoHS: Not Compliant Status: Active Min Qty: 1 | 631 |
|
$9.5400 / $11.9300 | Buy Now |
DISTI #
NVBLS1D1N08H
|
IBS Electronics | SINGLE N-CHANNEL 80 V 1.05 MOHM 166 NC 4.2 W SMT MOSFET - POWERSFN-56 Min Qty: 2000 Package Multiple: 1 | 0 |
|
$4.7840 | Buy Now |
DISTI #
NVBLS1D1N08H
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2000 | 0 |
|
$3.8500 | Buy Now |
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NVBLS1D1N08H
onsemi
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Datasheet
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Compare Parts:
NVBLS1D1N08H
onsemi
MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mΩ, 351 A MOSFET - Power, Single N-Channel, TOLL, 80 V, 1.05 m?Ω, 351 A, TO-LL 8L, 2000-REEL, Automotive Qualified
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-LL 8L | |
Package Description | H-PSOF8L, 8 PIN | |
Manufacturer Package Code | 100CU | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 1580 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 351 A | |
Drain-source On Resistance-Max | 0.00105 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 49 pF | |
JEDEC-95 Code | MO-299A | |
JESD-30 Code | R-PSSO-F2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 311 W | |
Pulsed Drain Current-Max (IDM) | 900 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB to further improve thermal performance.
Ensure that the device is operated within the recommended temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to reduce the junction temperature. Also, consider derating the device's power handling capability at high temperatures.
A gate drive voltage of 10-15V is recommended for optimal switching performance. However, the device can operate with a gate drive voltage as low as 6V, but with reduced switching performance.
Handle the device by the body or use an ESD wrist strap to prevent ESD damage. Use ESD-protected equipment and follow proper ESD handling procedures during assembly and testing.
A soldering profile with a peak temperature of 260°C and a dwell time of 30-60 seconds is recommended. Ensure that the device is not exposed to temperatures above 260°C for an extended period.