Datasheets
NVBLS1D1N08H by: onsemi

MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mΩ, 351 A MOSFET - Power, Single N-Channel, TOLL, 80 V, 1.05 m?Ω, 351 A, TO-LL 8L, 2000-REEL, Automotive Qualified

Part Details for NVBLS1D1N08H by onsemi

Results Overview of NVBLS1D1N08H by onsemi

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

NVBLS1D1N08H Information

NVBLS1D1N08H by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVBLS1D1N08H

Part # Distributor Description Stock Price Buy
DISTI # 91AH8579
Newark T8-80V In Toll For Automotive Market/ Reel Rohs Compliant: Yes |Onsemi NVBLS1D1N08H RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $4.1000
$4.1000 Buy Now
DISTI # 488-NVBLS1D1N08HCT-ND
DigiKey MOSFET N-CH 80V 41A/351A 8HPSOF Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1026
In Stock
  • 1 $7.5900
  • 10 $5.4060
  • 100 $4.7100
  • 2,000 $3.8480
$3.8480 / $7.5900 Buy Now
DISTI # NVBLS1D1N08H
Avnet Americas MOSFET N-Channel 80V TO-LL - Tape and Reel (Alt: NVBLS1D1N08H) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 16 Weeks, 0 Days Container: Reel 6000 Factory Stock
  • 2,000 $3.7542
  • 4,000 $3.7089
  • 8,000 $3.6648
  • 12,000 $3.6474
  • 16,000 $3.6216
$3.6216 / $3.7542 Buy Now
DISTI # 863-NVBLS1D1N08H
Mouser Electronics MOSFETs T8-80V IN TOLL 3032
  • 1 $7.4400
  • 10 $5.3000
  • 25 $5.2900
  • 100 $4.0300
  • 500 $3.8500
  • 2,000 $3.8400
$3.8400 / $7.4400 Buy Now
Onlinecomponents.com Single N-Channel 80 V 1.05 mOhm 166 nC 4.2 W SMT Mosfet - PowerSFN-56 RoHS: Compliant 0
  • 500 $11.0800
  • 1,000 $5.8500
  • 1,500 $4.0200
  • 2,000 $3.9400
$3.9400 / $11.0800 Buy Now
DISTI # 87650242
Verical Trans MOSFET N-CH 80V 41A 9-Pin(8+Tab) PSOF T/R Automotive AEC-Q101 Min Qty: 2000 Package Multiple: 2000 Americas - 6000
  • 2,000 $3.8722
$3.8722 Buy Now
DISTI # 86123947
Verical Trans MOSFET N-CH 80V 41A 9-Pin(8+Tab) PSOF T/R Automotive AEC-Q101 Min Qty: 26 Package Multiple: 1 Date Code: 2301 Americas - 631
  • 26 $14.9125
$14.9125 Buy Now
Rochester Electronics NVBLS1D1N08H - N-Channel, MOSFET - Power RoHS: Not Compliant Status: Active Min Qty: 1 631
  • 25 $11.9300
  • 100 $11.3300
  • 500 $10.7400
  • 1,000 $10.1400
  • 10,000 $9.5400
$9.5400 / $11.9300 Buy Now
DISTI # NVBLS1D1N08H
IBS Electronics SINGLE N-CHANNEL 80 V 1.05 MOHM 166 NC 4.2 W SMT MOSFET - POWERSFN-56 Min Qty: 2000 Package Multiple: 1 0
  • 2,000 $4.7840
$4.7840 Buy Now
DISTI # NVBLS1D1N08H
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2000 0
  • 2,000 $3.8500
$3.8500 Buy Now
DISTI # NVBLS1D1N08H
Avnet Asia MOSFET N-Channel 80V TO-LL (Alt: NVBLS1D1N08H) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 16 Weeks, 0 Days 10000
  • 2,000 $1.0775
  • 4,000 $0.9235
$0.9235 / $1.0775 Buy Now
DISTI # NVBLS1D1N08H
Avnet Silica MOSFET NChannel 80V TOLL (Alt: NVBLS1D1N08H) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NVBLS1D1N08H
EBV Elektronik MOSFET NChannel 80V TOLL (Alt: NVBLS1D1N08H) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 6000
RFQ

Part Details for NVBLS1D1N08H

NVBLS1D1N08H CAD Models

NVBLS1D1N08H Part Data Attributes

NVBLS1D1N08H onsemi
Buy Now Datasheet
Compare Parts:
NVBLS1D1N08H onsemi MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mΩ, 351 A MOSFET - Power, Single N-Channel, TOLL, 80 V, 1.05 m?Ω, 351 A, TO-LL 8L, 2000-REEL, Automotive Qualified
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-LL 8L
Package Description H-PSOF8L, 8 PIN
Manufacturer Package Code 100CU
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1580 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 351 A
Drain-source On Resistance-Max 0.00105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 49 pF
JEDEC-95 Code MO-299A
JESD-30 Code R-PSSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 311 W
Pulsed Drain Current-Max (IDM) 900 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

NVBLS1D1N08H Frequently Asked Questions (FAQ)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB to further improve thermal performance.

  • Ensure that the device is operated within the recommended temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to reduce the junction temperature. Also, consider derating the device's power handling capability at high temperatures.

  • A gate drive voltage of 10-15V is recommended for optimal switching performance. However, the device can operate with a gate drive voltage as low as 6V, but with reduced switching performance.

  • Handle the device by the body or use an ESD wrist strap to prevent ESD damage. Use ESD-protected equipment and follow proper ESD handling procedures during assembly and testing.

  • A soldering profile with a peak temperature of 260°C and a dwell time of 30-60 seconds is recommended. Ensure that the device is not exposed to temperatures above 260°C for an extended period.

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