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Part Details for NTTFS5116PLTWG by onsemi
Results Overview of NTTFS5116PLTWG by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTTFS5116PLTWG Information
NTTFS5116PLTWG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTTFS5116PLTWG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
24T3499
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Newark | Power Mosfet -60V -20A 52 Mohm Single P-Channel U8Fl Logic Level/ Reel Rohs Compliant: Yes |Onsemi NTTFS5116PLTWG RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2950 / $0.3790 | Buy Now |
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DISTI #
NTTFS5116PLTWGOSCT-ND
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DigiKey | MOSFET P-CH 60V 5.7A 8WDFN Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1114 In Stock |
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$0.2888 / $1.0900 | Buy Now |
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DISTI #
NTTFS5116PLTWG
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Avnet Americas | Trans MOSFET P-CH 60V 5.7A 8-Pin WDFN - Tape and Reel (Alt: NTTFS5116PLTWG) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.2541 / $0.2634 | Buy Now |
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DISTI #
863-NTTFS5116PLTWG
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Mouser Electronics | MOSFETs PFET U8FL 60V | 22744 |
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$0.3040 / $1.0400 | Buy Now |
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Onlinecomponents.com | Single P-Channel Power MOSFET -60V, -20A, 52mΩ RoHS: Compliant | 0 |
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$0.2681 / $0.5620 | Buy Now |
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DISTI #
NTTFS5116PLTWG
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IBS Electronics | SINGLE P-CHANNEL POWER MOSFET -60V -20A 52MΩ, Min Qty: 5000 Package Multiple: 1 | 0 |
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$0.3315 / $0.3380 | Buy Now |
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DISTI #
NTTFS5116PLTWG
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 5000 | 0 |
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$0.2700 | Buy Now |
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DISTI #
NTTFS5116PLTWG
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Avnet Silica | Trans MOSFET PCH 60V 57A 8Pin WDFN (Alt: NTTFS5116PLTWG) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NTTFS5116PLTWG
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EBV Elektronik | Trans MOSFET PCH 60V 57A 8Pin WDFN (Alt: NTTFS5116PLTWG) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 60V 20A 3.2W 52m10V6A 3V 1 piece P-channel WDFN-8(3.3x3.3) MOSFETs ROHS | 60 |
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$0.3893 / $0.7016 | Buy Now |
Part Details for NTTFS5116PLTWG
NTTFS5116PLTWG CAD Models
NTTFS5116PLTWG Part Data Attributes
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NTTFS5116PLTWG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTTFS5116PLTWG
onsemi
Single P-Channel Power MOSFET -60V, -20A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | WDFN8 3.3x3.3, 0.65P | |
| Package Description | WDFN8, 8 PIN | |
| Pin Count | 8 | |
| Manufacturer Package Code | 511AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 5.7 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 84 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 76 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTTFS5116PLTWG
This table gives cross-reference parts and alternative options found for NTTFS5116PLTWG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTTFS5116PLTWG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NVTFS5116PLTAG | onsemi | $0.5827 | Single P-Channel Power MOSFET -60V, -14A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL, Automotive Qualified | NTTFS5116PLTWG vs NVTFS5116PLTAG |
| NVTFS5116PLTWG | onsemi | $0.6648 | Single P-Channel Power MOSFET -60V, -14A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL, Automotive Qualified | NTTFS5116PLTWG vs NVTFS5116PLTWG |
| NVTFS5116PLWFTAG | onsemi | $0.9065 | Single P-Channel Power MOSFET -60V, -14A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL, Automotive Qualified | NTTFS5116PLTWG vs NVTFS5116PLWFTAG |
| NVTFS5116PLWFTWG | onsemi | Check for Price | Single P-Channel Power MOSFET -60V, -14A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL, Automotive Qualified | NTTFS5116PLTWG vs NVTFS5116PLWFTWG |
NTTFS5116PLTWG Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
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Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
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The device has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the PCB is properly grounded.
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Yes, the device is AEC-Q101 qualified and suitable for high-reliability and automotive applications. However, ensure you follow the recommended operating conditions and design guidelines to meet the required reliability standards.
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Use a systematic approach to troubleshoot issues. Check the power supply, input/output connections, and PCB layout. Verify the device is operated within the recommended specifications and consider using a oscilloscope or logic analyzer to debug the issue.