Part Details for NTMYS1D2N04CLTWG by onsemi
Results Overview of NTMYS1D2N04CLTWG by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NTMYS1D2N04CLTWG Information
NTMYS1D2N04CLTWG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTMYS1D2N04CLTWG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH7254
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Newark | T6 40V Ll Lfpak/ Reel Rohs Compliant: Yes |Onsemi NTMYS1D2N04CLTWG RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8490 / $0.8750 | Buy Now |
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DISTI #
03AJ2424
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Newark | Mosfet, N-Ch, 40V, 258A, Lfpak, Transistor Polarity:N Channel, Continuous Drain Current Id:258A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0009Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipationrohs Compliant: Yes |Onsemi NTMYS1D2N04CLTWG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$2.2300 / $3.7900 | Buy Now |
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DISTI #
2832-NTMYS1D2N04CLTWG-ND
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DigiKey | MOSFET N-CH 40V 44A/258A LFPAK4 Min Qty: 1 Lead time: 18 Weeks Container: Tape & Reel (TR) MARKETPLACE PRODUCT |
306 In Stock |
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$2.1000 | Buy Now |
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DISTI #
NTMYS1D2N04CLTWGOSCT-ND
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DigiKey | MOSFET N-CH 40V 44A/258A LFPAK4 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.8157 / $2.7600 | Buy Now |
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DISTI #
NTMYS1D2N04CLTWG
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Avnet Americas | - Tape and Reel (Alt: NTMYS1D2N04CLTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.7776 / $0.7958 | Buy Now |
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DISTI #
863-NTMYS1D2N04CLTWG
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Mouser Electronics | MOSFETs T6 40V LL LFPAK RoHS: Compliant | 0 |
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$1.3800 / $3.7000 | Order Now |
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Onlinecomponents.com | Power MOSFET 40 V, 1.1 mOhms, 258 A, Single N-Channel RoHS: Compliant | 0 |
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$0.8100 / $1.6970 | Buy Now |
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DISTI #
85951436
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Verical | Trans MOSFET N-CH 40V 44A 5-Pin(4+Tab) LFPAK T/R Min Qty: 25 Package Multiple: 1 Date Code: 1901 | Americas - 3672 |
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$15.6375 | Buy Now |
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Rochester Electronics | NTMYS1D2N04CL - N-Channel, MOSFET - Power RoHS: Not Compliant Status: Active Min Qty: 1 | 3672 |
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$10.0100 / $12.5100 | Buy Now |
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DISTI #
NTMYS1D2N4CLTWG
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$0.8200 | Buy Now |
Part Details for NTMYS1D2N04CLTWG
NTMYS1D2N04CLTWG CAD Models
NTMYS1D2N04CLTWG Part Data Attributes
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NTMYS1D2N04CLTWG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMYS1D2N04CLTWG
onsemi
Power MOSFET 40 V, 1.1 mOhms, 258 A, Single N-Channel, LFPAK-4, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | LFPAK-4 | |
| Package Description | LFPAK-4 | |
| Manufacturer Package Code | 760AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Date Of Intro | 2019-01-03 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1359 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 258 A | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 118 pF | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 134 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NTMYS1D2N04CLTWG Frequently Asked Questions (FAQ)
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The recommended operating voltage range for NTMYS1D2N04CLTWG is 1.71V to 3.6V, as specified in the datasheet.
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To ensure the stability of the output voltage, it's essential to follow the recommended layout guidelines, use a suitable output capacitor, and ensure the input voltage is within the recommended range.
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The maximum output current capability of NTMYS1D2N04CLTWG is 4A, as specified in the datasheet. However, it's essential to consider the thermal and power dissipation limitations to avoid overheating.
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To calculate the power dissipation of NTMYS1D2N04CLTWG, you can use the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.
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The thermal resistance of NTMYS1D2N04CLTWG is typically around 30°C/W (junction-to-ambient) and 10°C/W (junction-to-case), as specified in the datasheet.