Part Details for NTMSD6N303R2SG by onsemi
Results Overview of NTMSD6N303R2SG by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NTMSD6N303R2SG Information
NTMSD6N303R2SG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NTMSD6N303R2SG
NTMSD6N303R2SG CAD Models
NTMSD6N303R2SG Part Data Attributes
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NTMSD6N303R2SG
onsemi
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Datasheet
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NTMSD6N303R2SG
onsemi
6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 751-07, SOIC-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 325 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTMSD6N303R2SG
This table gives cross-reference parts and alternative options found for NTMSD6N303R2SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMSD6N303R2SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7353D1PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | NTMSD6N303R2SG vs IRF7353D1PBF |
| AP6618GM-HF | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power | NTMSD6N303R2SG vs AP6618GM-HF |
| IRF7353D1 | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | NTMSD6N303R2SG vs IRF7353D1 |
| SI9410DY-T1 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | NTMSD6N303R2SG vs SI9410DY-T1 |
| IRF7353D1TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | NTMSD6N303R2SG vs IRF7353D1TRPBF |