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Part Details for NTMJS1D4N06CLTWG by onsemi
Results Overview of NTMJS1D4N06CLTWG by onsemi
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Energy and Power Systems
Renewable Energy
Automotive
NTMJS1D4N06CLTWG Information
NTMJS1D4N06CLTWG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTMJS1D4N06CLTWG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
54AH9502
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Newark | Mosfet, N-Ch, 60V, 262A, 175Deg C, 180W Rohs Compliant: Yes |Onsemi NTMJS1D4N06CLTWG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4636 |
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$1.9700 / $3.6600 | Buy Now |
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DISTI #
488-NTMJS1D4N06CLTWGCT-ND
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DigiKey | MOSFET N-CH 60V 39A/262A 8LFPAK Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.9996 / $3.1400 | Buy Now |
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DISTI #
NTMJS1D4N06CLTWG
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Avnet Americas | Power MOSFET, N Channel, 60 V, 262 A, 0.00107 ohm, LFPAK, Surface Mount - Tape and Reel (Alt: NTMJS1D4N06CLTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.9253 / $0.9591 | Buy Now |
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DISTI #
863-NTMJS1D4N06CLTWG
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Mouser Electronics | MOSFETs T6 60V LL LFPAK | 2090 |
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$1.0100 / $3.0800 | Buy Now |
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DISTI #
V79:2366_27525356
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Arrow Electronics | Trans MOSFET N-CH 60V 39A 8-Pin LFPAK EP T/R Min Qty: 1 Package Multiple: 1 Date Code: 2205 | Americas - 2963 |
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$4.2320 | Buy Now |
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Onlinecomponents.com | Power MOSFET, N Channel, 60 V, 262 A, 0.00107 ohm, LFPAK, Surface Mount RoHS: Compliant | 0 |
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$0.9760 / $2.0450 | Buy Now |
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DISTI #
86016949
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Verical | Trans MOSFET N-CH 60V 39A 8-Pin LFPAK EP T/R Min Qty: 100 Package Multiple: 1 Date Code: 2201 | Americas - 3308 |
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$3.8125 | Buy Now |
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DISTI #
66774211
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Verical | Trans MOSFET N-CH 60V 39A 8-Pin LFPAK EP T/R Min Qty: 2 Package Multiple: 1 Date Code: 2205 | Americas - 2963 |
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$4.2320 | Buy Now |
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Rochester Electronics | NTMJS1D4N06CL - N-Channel, MOSFET - Power RoHS: Not Compliant Status: Active Min Qty: 1 | 3308 |
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$1.8900 / $3.0500 | Buy Now |
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DISTI #
NTMJS1D4N06CLTWG
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IBS Electronics | POWER MOSFET N CHANNEL 60 V 262 A 0.00107 OHM LFPAK SURFACE MOUNT Min Qty: 1 Package Multiple: 1 | 0 |
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$1.2220 / $1.4690 | Buy Now |
Part Details for NTMJS1D4N06CLTWG
NTMJS1D4N06CLTWG CAD Models
NTMJS1D4N06CLTWG Part Data Attributes
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NTMJS1D4N06CLTWG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMJS1D4N06CLTWG
onsemi
Power MOSFET 60 V, 1.3Ω, 262 A, Single N-Channel, LFPAK-8, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | LFPAK-8 | |
| Package Description | LFPAK-8 | |
| Manufacturer Package Code | 760AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1376 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 262 A | |
| Drain-source On Resistance-Max | 0.0018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 57 pF | |
| JESD-30 Code | R-PDSO-X5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NTMJS1D4N06CLTWG Frequently Asked Questions (FAQ)
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The maximum operating frequency of NTMJS1D4N06CLTWG is 100 kHz, but it can be operated at higher frequencies with proper thermal management and derating.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and derating the device according to the temperature derating curve provided in the datasheet.
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The recommended gate drive voltage for NTMJS1D4N06CLTWG is between 10V to 15V, with a maximum gate-source voltage of 20V. However, it's essential to consult the datasheet for specific gate drive requirements and ensure the gate driver is compatible with the device.
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To protect NTMJS1D4N06CLTWG from ESD, it's essential to follow proper handling and storage procedures, including using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and testing.
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The maximum allowed voltage imbalance between the drain and source pins of NTMJS1D4N06CLTWG is ±10V. Exceeding this limit can cause damage to the device.