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Part Details for NTMFWS1D5N08XT1G by onsemi
Results Overview of NTMFWS1D5N08XT1G by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTMFWS1D5N08XT1G Information
NTMFWS1D5N08XT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTMFWS1D5N08XT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AK4674
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Newark | Mosfet, N-Ch, 80V, 253A, Dfnw Rohs Compliant: Yes |Onsemi NTMFWS1D5N08XT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$2.8100 | Buy Now |
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DISTI #
87AK0333
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Newark | T10S 80V Sg Nch Mosfet So8Fl He Wf/ Reel Rohs Compliant: Yes |Onsemi NTMFWS1D5N08XT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.8100 | Buy Now |
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DISTI #
488-NTMFWS1D5N08XT1GCT-ND
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DigiKey | MOSFET - POWER, SINGLE, N-CHANNE Min Qty: 1 Lead time: 25 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$1.3135 / $3.6900 | Buy Now |
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DISTI #
NTMFWS1D5N08XT1G
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Avnet Americas | Power MOSFET, N Channel, 80 V, 253 A, 0.00143 ohm, DFNW-EP, Surface Mount - Tape and Reel (Alt: NTMFWS1D5N08XT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.2362 / $1.2815 | Buy Now |
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DISTI #
863-NTMFWS1D5N08XT1G
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Mouser Electronics | MOSFETs T10S 80V SG NCH MOSFET SO8FL HE WF RoHS: Compliant | 5 |
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$1.3100 / $3.6200 | Buy Now |
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Onlinecomponents.com | 80 V 253 A 1.43 mOhm Surface Mount Single N-Channel MOSFET - DFNW-5 RoHS: Compliant | 0 |
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$1.2600 / $1.3800 | Buy Now |
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DISTI #
NTMFWS1D5N08XT1G
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IBS Electronics | NTMFWS1D5N08XT1G by ONSEMI is a 80V N-channel MOSFET with 1.5mΩ, Rds(on), 100A continuous current, and a compact PowerPAK SO-8 package, ideal for high-efficiency power management applications. Min Qty: 1500 Package Multiple: 1 | 0 |
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$1.6380 | Buy Now |
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DISTI #
NTMFWS1DN08XT1G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 | 0 |
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$1.3100 | Buy Now |
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DISTI #
NTMFWS1D5N08XT1G
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Avnet Asia | Power MOSFET, N Channel, 80 V, 253 A, 0.00143 ohm, DFNW-EP, Surface Mount (Alt: NTMFWS1D5N08XT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days | 0 |
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$1.2362 / $1.5011 | Buy Now |
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DISTI #
NTMFWS1D5N08XT1G
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Avnet Silica | Power MOSFET N Channel 80 V 253 A 000143 ohm DFNWEP Surface Mount (Alt: NTMFWS1D5N08XT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for NTMFWS1D5N08XT1G
NTMFWS1D5N08XT1G CAD Models
NTMFWS1D5N08XT1G Part Data Attributes
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NTMFWS1D5N08XT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMFWS1D5N08XT1G
onsemi
MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mΩ, 253 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mΩ, 253 A, DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFNW5 4.90x5.90x1.00, 1.27P | |
| Package Description | SO-8FL WF, DFNW5, 4 PIN | |
| Manufacturer Package Code | 507BA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 225 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 253 A | |
| Drain-source On Resistance-Max | 0.00143 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JESD-30 Code | R-PSSO-F4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 194 W | |
| Pulsed Drain Current-Max (IDM) | 1071 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
NTMFWS1D5N08XT1G Frequently Asked Questions (FAQ)
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A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
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Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement thermal management techniques such as heat sinks, thermal interfaces, and airflow to maintain a safe operating temperature.
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The NTMFWS1D5N08XT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
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Yes, the NTMFWS1D5N08XT1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, additional testing and validation may be required for specific applications.
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Use a systematic approach to troubleshoot issues, starting with a review of the device's operating conditions, PCB layout, and component selection. Utilize onsemi's application notes and technical support resources, and consider performing failure analysis or consulting with an onsemi field application engineer.