Datasheets
NTMFS5C646NLT1G by: onsemi

Single N−Channel Power MOSFET 60V, 84A, 4.7mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL

Part Details for NTMFS5C646NLT1G by onsemi

Results Overview of NTMFS5C646NLT1G by onsemi

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NTMFS5C646NLT1G Information

NTMFS5C646NLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTMFS5C646NLT1G

Part # Distributor Description Stock Price Buy
DISTI # 31Y3288
Newark Mosfet Transistor, N Channel, 19 A, 60 V, 0.0038 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi NTMFS5C646NLT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1000
  • 1 $2.4200
  • 10 $1.7700
  • 25 $1.6300
  • 50 $1.4800
$1.4800 / $2.4200 Buy Now
DISTI # 86X0939
Newark Mosfet Transistor, N Channel, 19 A, 60 V, 0.0038 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi NTMFS5C646NLT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.4000
  • 3,000 $1.3400
  • 6,000 $1.2200
  • 12,000 $1.1100
  • 18,000 $1.0700
  • 30,000 $1.0400
$1.0400 / $1.4000 Buy Now
DISTI # NTMFS5C646NLT1GOSCT-ND
DigiKey MOSFET N-CH 60V 19A 5DFN Min Qty: 1 Lead time: 99 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) 1851
In Stock
  • 1 $2.3400
  • 10 $1.7440
  • 100 $1.3566
  • 500 $1.2517
  • 1,500 $1.0272
  • 3,000 $1.0226
$1.0226 / $2.3400 Buy Now
DISTI # NTMFS5C646NLT1G
Avnet Americas Trans MOSFET N-CH 60V 89A 8-Pin SO-FL T/R - Tape and Reel (Alt: NTMFS5C646NLT1G) RoHS: Compliant Min Qty: 807 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 112500 Partner Stock
  • 807 $1.0494
  • 810 $1.0440
  • 1,700 $0.9247
  • 4,100 $0.9199
  • 8,100 $0.9152
$0.9152 / $1.0494 Buy Now
DISTI # NTMFS5C646NLT1G
Avnet Americas Trans MOSFET N-CH 60V 89A 8-Pin SO-FL T/R - Tape and Reel (Alt: NTMFS5C646NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 111 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.9549
  • 3,000 $0.9434
  • 6,000 $0.9321
  • 9,000 $0.9277
  • 12,000 $0.9212
$0.9212 / $0.9549 Buy Now
DISTI # 863-NTMFS5C646NLT1G
Mouser Electronics MOSFETs NFET SO8FL 60V 92A 4.5MOH RoHS: Compliant 5278
  • 1 $2.2000
  • 10 $1.6900
  • 100 $1.3600
  • 500 $1.2600
  • 1,000 $1.0700
  • 1,500 $1.0200
  • 3,000 $1.0100
$1.0100 / $2.2000 Buy Now
DISTI # V72:2272_07278273
Arrow Electronics Trans MOSFET N-CH 60V 20A 5-Pin SO-FL EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 2217 Container: Cut Strips Americas - 16
  • 1 $1.5840
  • 10 $1.0708
$1.0708 / $1.5840 Buy Now
DISTI # 70547364
RS NTMFS5C646NLT1G N-channel MOSFET Transistor, 89 A, 60 V, 8-Pin SO-8FL Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $2.6100
  • 50 $2.4800
  • 250 $2.3500
  • 500 $2.2200
$2.2200 / $2.6100 RFQ
Onlinecomponents.com ON SEMICONDUCTOR NTMFS5C646NLT1GMOSFET Transistor, N Channel, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V RoHS: Compliant 0
  • 375 $1.4900
  • 750 $1.4200
  • 1,125 $1.3100
  • 1,500 $1.0000
  • 3,000 $0.9800
$0.9800 / $1.4900 Buy Now
Bristol Electronics   1182
RFQ
ComSIT USA Power Field-Effect Transistor, 93A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant Stock DE - 1120
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # NTMFS5C646NLT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 0
  • 1,500 $0.9800
$0.9800 Buy Now
DISTI # NTMFS5C646NLT1G
Avnet Asia Trans MOSFET N-CH 60V 89A 8-Pin SO-FL T/R (Alt: NTMFS5C646NLT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 0
  • 3,000 $1.0299
  • 6,000 $1.0165
  • 9,000 $1.0035
  • 15,000 $0.9908
  • 30,000 $0.9663
  • 75,000 $0.9430
  • 150,000 $0.9208
$0.9208 / $1.0299 Buy Now
DISTI # NTMFS5C646NLT1G
Avnet Silica Trans MOSFET NCH 60V 89A 8Pin SOFL TR (Alt: NTMFS5C646NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 53 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NTMFS5C646NLT1G
EBV Elektronik Trans MOSFET NCH 60V 89A 8Pin SOFL TR (Alt: NTMFS5C646NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 112500
RFQ
Win Source Electronics MOSFET N-CH 60V 19A 5DFN 83000
  • 55 $1.1404
  • 125 $0.9357
  • 195 $0.9064
  • 265 $0.8773
  • 345 $0.8480
  • 460 $0.7602
$0.7602 / $1.1404 Buy Now

Part Details for NTMFS5C646NLT1G

NTMFS5C646NLT1G CAD Models

NTMFS5C646NLT1G Part Data Attributes

NTMFS5C646NLT1G onsemi
Buy Now Datasheet
Compare Parts:
NTMFS5C646NLT1G onsemi Single N−Channel Power MOSFET 60V, 84A, 4.7mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DFN5 5X6, 1.27P (SO 8FL)
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 185 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 93 A
Drain-source On Resistance-Max 0.0063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 750 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

NTMFS5C646NLT1G Related Parts

NTMFS5C646NLT1G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to maintain a safe junction temperature. Monitor the device's thermal performance and adjust the system design accordingly.

  • The NTMFS5C646NLT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.

  • Yes, the NTMFS5C646NLT1G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that the device is used within the recommended operating conditions and that the system design meets the required reliability and safety standards.

  • Check the input voltage, output voltage, and current consumption. Verify that the device is properly connected and that the output capacitor is of sufficient value. Consult the datasheet and application notes for troubleshooting guidelines and design recommendations.

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