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Single N−Channel Power MOSFET 60V, 84A, 4.7mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTMFS5C646NLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y3288
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Newark | Mosfet Transistor, N Channel, 19 A, 60 V, 0.0038 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi NTMFS5C646NLT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1000 |
|
$1.4800 / $2.4200 | Buy Now |
DISTI #
86X0939
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Newark | Mosfet Transistor, N Channel, 19 A, 60 V, 0.0038 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi NTMFS5C646NLT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.0400 / $1.4000 | Buy Now |
DISTI #
NTMFS5C646NLT1GOSCT-ND
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DigiKey | MOSFET N-CH 60V 19A 5DFN Min Qty: 1 Lead time: 99 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
1851 In Stock |
|
$1.0226 / $2.3400 | Buy Now |
DISTI #
NTMFS5C646NLT1G
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Avnet Americas | Trans MOSFET N-CH 60V 89A 8-Pin SO-FL T/R - Tape and Reel (Alt: NTMFS5C646NLT1G) RoHS: Compliant Min Qty: 807 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 112500 Partner Stock |
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$0.9152 / $1.0494 | Buy Now |
DISTI #
NTMFS5C646NLT1G
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Avnet Americas | Trans MOSFET N-CH 60V 89A 8-Pin SO-FL T/R - Tape and Reel (Alt: NTMFS5C646NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
|
$0.9212 / $0.9549 | Buy Now |
DISTI #
863-NTMFS5C646NLT1G
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Mouser Electronics | MOSFETs NFET SO8FL 60V 92A 4.5MOH RoHS: Compliant | 5278 |
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$1.0100 / $2.2000 | Buy Now |
DISTI #
V72:2272_07278273
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Arrow Electronics | Trans MOSFET N-CH 60V 20A 5-Pin SO-FL EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 2217 Container: Cut Strips | Americas - 16 |
|
$1.0708 / $1.5840 | Buy Now |
DISTI #
70547364
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RS | NTMFS5C646NLT1G N-channel MOSFET Transistor, 89 A, 60 V, 8-Pin SO-8FL Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$2.2200 / $2.6100 | RFQ |
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Onlinecomponents.com | ON SEMICONDUCTOR NTMFS5C646NLT1GMOSFET Transistor, N Channel, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V RoHS: Compliant | 0 |
|
$0.9800 / $1.4900 | Buy Now |
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Bristol Electronics | 1182 |
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RFQ |
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NTMFS5C646NLT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMFS5C646NLT1G
onsemi
Single N−Channel Power MOSFET 60V, 84A, 4.7mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DFN5 5X6, 1.27P (SO 8FL) | |
Manufacturer Package Code | 488AA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 185 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 93 A | |
Drain-source On Resistance-Max | 0.0063 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 79 W | |
Pulsed Drain Current-Max (IDM) | 750 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to maintain a safe junction temperature. Monitor the device's thermal performance and adjust the system design accordingly.
The NTMFS5C646NLT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
Yes, the NTMFS5C646NLT1G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that the device is used within the recommended operating conditions and that the system design meets the required reliability and safety standards.
Check the input voltage, output voltage, and current consumption. Verify that the device is properly connected and that the output capacitor is of sufficient value. Consult the datasheet and application notes for troubleshooting guidelines and design recommendations.