Part Details for NTMFS4H01NT1G by onsemi
Results Overview of NTMFS4H01NT1G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTMFS4H01NT1G Information
NTMFS4H01NT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTMFS4H01NT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
68X4379
|
Newark | Nfet So8Fl 25V 334A 700Mo/Reel Rohs Compliant: Yes |Onsemi NTMFS4H01NT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
DISTI #
NTMFS4H01NT1G
|
Avnet Silica | Trans MOSFET NCH 25V 54A 8Pin SOFL TR (Alt: NTMFS4H01NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
|
Cytech Systems Limited | MOSFET N-CH 25V 54A/334A 5DFN | 960 |
|
RFQ |
Part Details for NTMFS4H01NT1G
NTMFS4H01NT1G CAD Models
NTMFS4H01NT1G Part Data Attributes
|
|
NTMFS4H01NT1G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTMFS4H01NT1G
onsemi
Single N−Channel Power MOSFET 25V, 334A, 0.7mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN5 5X6, 1.27P (SO 8FL) | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 505 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 54 A | |
| Drain-source On Resistance-Max | 0.00097 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 212 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 568 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
NTMFS4H01NT1G Frequently Asked Questions (FAQ)
-
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
-
Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
-
Follow the onsemi recommended soldering profile: peak temperature 260°C, time above 217°C 60s max. For rework, use a low-temperature soldering iron (<350°C) and avoid applying excessive force or pressure.
-
Use ESD-protective packaging, wrist straps, and mats. Ground all equipment and personnel before handling the device. Avoid touching the device's pins or leads.
-
Store the device in its original packaging, away from direct sunlight, moisture, and extreme temperatures (-40°C to 40°C). Handle the device by the body, not the leads.