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Single N-Channel Power MOSFET 30V, 69A, 4mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
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NTMFS4C06NT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
51Y4999
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Newark | Mosfet Transistor, N Channel, 69 A, 30 V, 0.0032 Ohm, 10 V, 2.1 V Rohs Compliant: Yes |Onsemi NTMFS4C06NT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1274 |
|
$0.3810 / $0.5800 | Buy Now |
DISTI #
60W1789
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Newark | N Channel Mosfet, 30V, Dfn-5, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:69A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.1V, Product Range:-Rohs Compliant: Yes |Onsemi NTMFS4C06NT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1990 / $0.2650 | Buy Now |
DISTI #
NTMFS4C06NT1GOSCT-ND
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DigiKey | MOSFET N-CH 30V 11A/69A 5DFN Min Qty: 1 Lead time: 53 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2173 In Stock |
|
$0.2675 / $0.9100 | Buy Now |
DISTI #
NTMFS4C06NT1G
|
Avnet Americas | Power MOSFET, N Channel, 30 V, 69 A, 0.0032 ohm, DFN, Surface Mount - Tape and Reel (Alt: NTMFS4C06NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 53 Weeks, 0 Days Container: Reel | 1500 |
|
$0.2425 / $0.2475 | Buy Now |
DISTI #
863-NTMFS4C06NT1G
|
Mouser Electronics | MOSFETs NFET SO8FL 30V 69A 4MOHM RoHS: Compliant | 71856 |
|
$0.2570 / $0.7200 | Buy Now |
DISTI #
V72:2272_07290457
|
Arrow Electronics | Trans MOSFET N-CH 30V 20A 5-Pin SO-FL EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks Date Code: 2427 Container: Cut Strips | Americas - 3000 |
|
$0.2518 / $0.3940 | Buy Now |
|
Onlinecomponents.com | NTMFS4C06NT1G N-channel MOSFET Transistor, 69 A, 30 V, 8-Pin SO-8FL RoHS: Compliant | 0 |
|
$0.1857 / $0.2108 | Buy Now |
DISTI #
86013083
|
Verical | Trans MOSFET N-CH 30V 20A 5-Pin SO-FL EP T/R Min Qty: 828 Package Multiple: 1 Date Code: 2201 | Americas - 9000 |
|
$0.4530 | Buy Now |
DISTI #
83147718
|
Verical | Trans MOSFET N-CH 30V 20A 5-Pin SO-FL EP T/R Min Qty: 24 Package Multiple: 1 Date Code: 2427 | Americas - 3000 |
|
$0.2518 / $0.3408 | Buy Now |
|
Rochester Electronics | NTMFS4C06N - Small Signal Field-Effect Transistor, 11A, 30V, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 9000 |
|
$0.2247 / $0.3624 | Buy Now |
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NTMFS4C06NT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMFS4C06NT1G
onsemi
Single N-Channel Power MOSFET 30V, 69A, 4mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DFN5 5X6, 1.27P (SO 8FL) | |
Pin Count | 5 | |
Manufacturer Package Code | 488AA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 68 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 40 pF | |
JESD-30 Code | R-PDSO-F6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 30.5 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The recommended PCB footprint for NTMFS4C06NT1G is a 5x5mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
To ensure reliable operation of NTMFS4C06NT1G in high-temperature environments, it is recommended to follow the thermal management guidelines provided in the datasheet, including proper heat sinking and thermal interface material selection.
The maximum allowed voltage on the gate of NTMFS4C06NT1G is 12V, as specified in the datasheet. Exceeding this voltage may damage the device.
Yes, NTMFS4C06NT1G can be used in switching applications, but it is essential to follow the recommended switching frequency and duty cycle guidelines to avoid overheating and ensure reliable operation.
To protect NTMFS4C06NT1G from electrostatic discharge (ESD), it is recommended to follow proper ESD handling and storage procedures, including the use of ESD-safe materials and equipment.