Part Details for NTMFD4902NFT1G by onsemi
Results Overview of NTMFD4902NFT1G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTMFD4902NFT1G Information
NTMFD4902NFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTMFD4902NFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
65T1509
|
Newark | Nfet So8Fl 30V 10.8A 7Mo/Reel Rohs Compliant: Yes |Onsemi NTMFD4902NFT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
DISTI #
NTMFD4902NFT1G
|
Avnet Silica | Transistor MOSFET Array Dual NCH 30V 23A 8Pin DFN EP TR (Alt: NTMFD4902NFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
NTMFD4902NFT1G
|
EBV Elektronik | Transistor MOSFET Array Dual NCH 30V 23A 8Pin DFN EP TR (Alt: NTMFD4902NFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for NTMFD4902NFT1G
NTMFD4902NFT1G CAD Models
NTMFD4902NFT1G Part Data Attributes
|
|
NTMFD4902NFT1G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTMFD4902NFT1G
onsemi
Dual N-Channel Power MOSFET with Integrated Schottky 30V, DFN8 5x6, 1.27P (SO8FL-Dual-Asymmetrical), 1500-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN8 5x6, 1.27P (SO8FL-Dual-Asymmetrical) | |
| Package Description | DFN8, 10 PIN | |
| Pin Count | 8 | |
| Manufacturer Package Code | 506BX | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 28.8 mJ | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13.5 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.45 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTMFD4902NFT1G
This table gives cross-reference parts and alternative options found for NTMFD4902NFT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMFD4902NFT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTMFD4901NFT1G | onsemi | Check for Price | Dual N-Channel Power MOSFET with Integrated Schottky 30V,, DFN8 5x6, 1.27P (SO8FL-Dual-Asymmetrical), 1500-REEL | NTMFD4902NFT1G vs NTMFD4901NFT1G |
| EMB04K03HP | Excelliance MOS Corporation | Check for Price | Power Field-Effect Transistor, 15A I(D), 30V, 0.0095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8 | NTMFD4902NFT1G vs EMB04K03HP |
NTMFD4902NFT1G Frequently Asked Questions (FAQ)
-
A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
-
The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this. Refer to the application note for a recommended biasing circuit.
-
The maximum allowable power dissipation for NTMFD4902NFT1G is 2.5W. Exceeding this limit can cause the device to overheat and reduce its lifespan.
-
Yes, NTMFD4902NFT1G is a high-reliability device that meets the requirements of AEC-Q101. It is suitable for use in automotive and other high-reliability applications.
-
The device has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.