Part Details for NTMFD4901NFT1G by onsemi
Results Overview of NTMFD4901NFT1G by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTMFD4901NFT1G Information
NTMFD4901NFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTMFD4901NFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NTMFD4901NFT1G
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Avnet Silica | Transistor MOSFET Array Dual NCH 30V 234A 8Pin DFN TR (Alt: NTMFD4901NFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | MOSFET 2N-CH 30V 10.3A 8DFN | 1500 |
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RFQ | |
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DISTI #
NTMFD4901NFT1G
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EBV Elektronik | Transistor MOSFET Array Dual NCH 30V 234A 8Pin DFN TR (Alt: NTMFD4901NFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET 2N-CH 30V 8DFN | 8298 |
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$0.9443 / $1.4163 | Buy Now |
Part Details for NTMFD4901NFT1G
NTMFD4901NFT1G CAD Models
NTMFD4901NFT1G Part Data Attributes
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NTMFD4901NFT1G
onsemi
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Datasheet
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NTMFD4901NFT1G
onsemi
Dual N-Channel Power MOSFET with Integrated Schottky 30V,, DFN8 5x6, 1.27P (SO8FL-Dual-Asymmetrical), 1500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN8 5x6, 1.27P (SO8FL-Dual-Asymmetrical) | |
| Package Description | DFN8, 10 PIN | |
| Pin Count | 8 | |
| Manufacturer Package Code | 506BX | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 28.8 mJ | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13.5 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.45 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTMFD4901NFT1G
This table gives cross-reference parts and alternative options found for NTMFD4901NFT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMFD4901NFT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| EMB04K03HP | Excelliance MOS Corporation | Check for Price | Power Field-Effect Transistor, 15A I(D), 30V, 0.0095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8 | NTMFD4901NFT1G vs EMB04K03HP |
| NTMFD4902NFT1G | onsemi | Check for Price | Dual N-Channel Power MOSFET with Integrated Schottky 30V, DFN8 5x6, 1.27P (SO8FL-Dual-Asymmetrical), 1500-REEL | NTMFD4901NFT1G vs NTMFD4902NFT1G |
NTMFD4901NFT1G Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
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The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
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Handle the device in an ESD-protected environment, wear an ESD strap, and use ESD-safe tools and materials to prevent damage. Avoid touching the device's pins or leads to prevent ESD damage.
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Use a thermal imaging camera to detect hotspots, and check the device's voltage and current ratings. Verify the PCB layout and component placement, and check for any signs of physical damage or contamination.
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The NTMFD4901NFT1G meets the AEC-Q101 automotive quality standard and is manufactured in accordance with IATF 16949 and ISO 9001 quality management standards.