Part Details for NTHD4P02FT1G by onsemi
Results Overview of NTHD4P02FT1G by onsemi
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
NTHD4P02FT1G Information
NTHD4P02FT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTHD4P02FT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NTHD4P02FT1GOSCT-ND
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DigiKey | MOSFET P-CH 20V 2.2A CHIPFET Min Qty: 1 Lead time: 99 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
2808 In Stock |
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$0.7019 / $2.2000 | Buy Now |
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DISTI #
NTHD4P02FT1G
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Avnet Americas | Transistor MOSFET P-CH 20V 3A 8-Pin ChipFET T/R - Tape and Reel (Alt: NTHD4P02FT1G) RoHS: Compliant Min Qty: 1667 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 248443 Partner Stock |
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$0.3529 / $0.3659 | Buy Now |
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DISTI #
86002680
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Verical | Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin RoHS: Compliant Min Qty: 352 Package Multiple: 1 Date Code: 1001 | Americas - 105000 |
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$1.0669 | Buy Now |
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DISTI #
86315826
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Verical | Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin RoHS: Compliant Min Qty: 352 Package Multiple: 1 Date Code: 2301 | Americas - 57000 |
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$1.0669 | Buy Now |
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DISTI #
86018291
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Verical | Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin RoHS: Compliant Min Qty: 352 Package Multiple: 1 Date Code: 1401 | Americas - 54000 |
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$1.0669 | Buy Now |
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DISTI #
86007608
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Verical | Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin RoHS: Compliant Min Qty: 352 Package Multiple: 1 | Americas - 49666 |
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$1.0669 | Buy Now |
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DISTI #
86015127
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Verical | Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin RoHS: Compliant Min Qty: 352 Package Multiple: 1 Date Code: 1301 | Americas - 30000 |
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$1.0669 | Buy Now |
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DISTI #
86018545
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Verical | Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin RoHS: Compliant Min Qty: 352 Package Multiple: 1 Date Code: 0501 | Americas - 30000 |
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$1.0669 | Buy Now |
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DISTI #
86018256
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Verical | Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin RoHS: Compliant Min Qty: 352 Package Multiple: 1 Date Code: 1101 | Americas - 30000 |
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$1.0669 | Buy Now |
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DISTI #
86007731
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Verical | Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin RoHS: Compliant Min Qty: 352 Package Multiple: 1 Date Code: 2201 | Americas - 21000 |
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$1.0669 | Buy Now |
Part Details for NTHD4P02FT1G
NTHD4P02FT1G CAD Models
NTHD4P02FT1G Part Data Attributes
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NTHD4P02FT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTHD4P02FT1G
onsemi
Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ, ChipFET, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | ChipFET | |
| Pin Count | 8 | |
| Manufacturer Package Code | 1206A-03 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.2 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.1 W | |
| Pulsed Drain Current-Max (IDM) | 9 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 37 ns |
Alternate Parts for NTHD4P02FT1G
This table gives cross-reference parts and alternative options found for NTHD4P02FT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHD4P02FT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTHD4P02FT1G | Rochester Electronics LLC | Check for Price | 2.2A, 20V, 0.155ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8 | NTHD4P02FT1G vs NTHD4P02FT1G |
| NTHD4P02FT1 | onsemi | Check for Price | Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ, ChipFET, 3000-REEL | NTHD4P02FT1G vs NTHD4P02FT1 |
NTHD4P02FT1G Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an internal or bottom-side copper plane.
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Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement proper thermal management, such as heat sinks or thermal interfaces, to keep the junction temperature below the maximum rating.
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The NTHD4P02FT1G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
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Yes, the NTHD4P02FT1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a process that is compliant with IATF 16949.
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The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10 Ω and 100 Ω. Consult the application note or onsemi's support resources for more detailed guidance.