Part Details for NTHD3102CT1G by onsemi
Results Overview of NTHD3102CT1G by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
NTHD3102CT1G Information
NTHD3102CT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTHD3102CT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09R9653
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Newark | Dual N/P Channel Mosfet, 20V, 1206A, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:4A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHD3102CT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
42K2442
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Newark | Dual N/P Channel Mosfet, 20V, 1206A, Full Reel, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:4A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHD3102CT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
NTHD3102CT1GOSCT-ND
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DigiKey | MOSFET N/P-CH 20V 4A CHIPFET Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
2 In Stock |
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$1.5900 | Buy Now |
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Quest Components | 4 A, 20 V, 0.045 OHM, 2 CHANNEL, N AND P-CHANNEL, SI, POWER, MOSFET | 475 |
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$0.4011 / $0.8595 | Buy Now |
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Quest Components | 4 A, 20 V, 0.045 OHM, 2 CHANNEL, N AND P-CHANNEL, SI, POWER, MOSFET | 85 |
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$0.7163 / $1.4325 | Buy Now |
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Rochester Electronics | NTHD3102C - Complementary ChipFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 75317 |
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$0.3368 / $0.5432 | Buy Now |
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DISTI #
NTHD3102CT1G
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TME | Transistor: N/P-MOSFET, unipolar, complementary pair, 20/-20V Min Qty: 1 | 0 |
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$0.5030 / $1.0050 | RFQ |
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DISTI #
NTHD3102CT1G
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Avnet Silica | Trans MOSFET NPCH 20V 4A31A 8Pin Chip FET TR (Alt: NTHD3102CT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NTHD3102CT1G
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EBV Elektronik | Trans MOSFET NPCH 20V 4A31A 8Pin Chip FET TR (Alt: NTHD3102CT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 26697 |
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RFQ |
Part Details for NTHD3102CT1G
NTHD3102CT1G CAD Models
NTHD3102CT1G Part Data Attributes
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NTHD3102CT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTHD3102CT1G
onsemi
Complementary ChipFET™ Power MOSFET 20V, ChipFET, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | ChipFET | |
| Package Description | CHIPFET-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 1206A-03 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
NTHD3102CT1G Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to connect to the copper area.
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The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator or a voltage reference should be used to provide a stable input voltage. The biasing circuit should be designed to provide a stable voltage and current to the device.
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The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handling the device requires proper ESD protection, such as wearing an ESD strap or using an ESD mat. Additionally, the device should be handled by the body and not the leads to prevent mechanical stress.
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The optimal gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, the optimal value may need to be determined through experimentation and simulation.
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When paralleling multiple devices, it is essential to ensure that each device has an identical thermal environment and is properly biased. The devices should be connected in parallel using a bus bar or a PCB with a low impedance path. Additionally, the gate drive circuitry should be designed to ensure simultaneous switching of all devices.