Part Details for NTHD3102CT1G by Rochester Electronics LLC
Results Overview of NTHD3102CT1G by Rochester Electronics LLC
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- CAD Models: (Request Part)
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NTHD3102CT1G Information
NTHD3102CT1G by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NTHD3102CT1G
NTHD3102CT1G CAD Models
NTHD3102CT1G Part Data Attributes
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NTHD3102CT1G
Rochester Electronics LLC
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Datasheet
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NTHD3102CT1G
Rochester Electronics LLC
4A, 20V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, LEAD LESS, CASE 1206A-03, CHIPFET-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Package Description | LEAD FREE, LEAD LESS, CASE 1206A-03, CHIPFET-8 | |
Pin Count | 8 | |
Manufacturer Package Code | CASE 1206A-03 | |
Reach Compliance Code | unknown | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | NOT SPECIFIED | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |