Part Details for NTF3055L108T1 by onsemi
Results Overview of NTF3055L108T1 by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
NTF3055L108T1 Information
NTF3055L108T1 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NTF3055L108T1
NTF3055L108T1 CAD Models
NTF3055L108T1 Part Data Attributes
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NTF3055L108T1
onsemi
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Datasheet
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NTF3055L108T1
onsemi
Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ, SOT-223 (TO-261) 4 LEAD, 1000-REEL
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-223 (TO-261) 4 LEAD | |
| Package Description | CASE 318E-04, TO-261, 4 PIN | |
| Pin Count | 4 | |
| Manufacturer Package Code | 0.0318 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 74 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 9 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn80Pb20) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTF3055L108T1
This table gives cross-reference parts and alternative options found for NTF3055L108T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTF3055L108T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| NTF3055L108T1G | onsemi | $0.3997 | Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ, SOT-223 (TO-261) 4 LEAD, 1000-REEL | NTF3055L108T1 vs NTF3055L108T1G |
| NVF3055L108T1G | onsemi | $0.5751 | Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ Automotive Version of the NTF3055L108, SOT-223 (TO-261) 4 LEAD, 1000-REEL, Automotive Qualified | NTF3055L108T1 vs NVF3055L108T1G |
| NTF3055L108T3LF | onsemi | Check for Price | 3A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA, CASE 318E-04, TO-261, 4 PIN | NTF3055L108T1 vs NTF3055L108T3LF |
| NTF3055L108T3G | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ, SOT-223 (TO-261) 4 LEAD, 4000-REEL | NTF3055L108T1 vs NTF3055L108T3G |
NTF3055L108T1 Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom of the package. A minimum of 2 oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable thermal design, and implement adequate cooling mechanisms. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
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The NTF3055L108T1 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
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Yes, the NTF3055L108T1 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a process that is compliant with IATF 16949.
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The recommended soldering conditions for the NTF3055L108T1 are a peak temperature of 260°C, a dwell time above 217°C of 30 seconds, and a total process time of 60 seconds. A soldering iron temperature of 350°C is recommended.