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Part Details for NTDS015N15MCT4G by onsemi
Results Overview of NTDS015N15MCT4G by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTDS015N15MCT4G Information
NTDS015N15MCT4G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTDS015N15MCT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3528501
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Farnell | MOSFET, N-CH, 150V, 50A, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 2070 |
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$0.8758 / $1.9005 | Buy Now |
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DISTI #
3528501RL
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Farnell | MOSFET, N-CH, 150V, 50A, TO-252 RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel | 2070 |
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$0.8758 / $1.2652 | Buy Now |
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DISTI #
488-NTDS015N15MCT4GCT-ND
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DigiKey | MOSFET N-CH 150V 11A/50A DPAK Min Qty: 1 Lead time: 56 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2349 In Stock |
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$0.9429 / $2.8300 | Buy Now |
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DISTI #
NTDS015N15MCT4G
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Avnet Americas | Transistor MOSFET N-CH 150V 50A 15mOhm 4-Pin DPAK Tube - Tape and Reel (Alt: NTDS015N15MCT4G) RoHS: Compliant Min Qty: 747 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 0 |
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$0.8677 / $0.8857 | Buy Now |
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DISTI #
V72:2272_24746974
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Arrow Electronics | Trans MOSFET N-CH 150V 11A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 54 Weeks Date Code: 2230 Container: Cut Strips | Americas - 1400 |
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$0.9038 / $1.0113 | Buy Now |
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DISTI #
63267548
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Verical | Trans MOSFET N-CH 150V 11A 3-Pin(2+Tab) DPAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2230 | Americas - 1400 |
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$0.9038 / $1.0113 | Buy Now |
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Rochester Electronics | NTDS015N15MCT4G - N-Channel Shielded Gate PowerTrench MOSFET 150 V, 50 A RoHS: Compliant Status: Obsolete Min Qty: 1 | 52500 |
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$1.1100 / $1.3900 | Buy Now |
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DISTI #
NTDS015N15MCT4G
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TME | Transistor: N-MOSFET, unipolar, 150V, 11A, Idm: 246A, 3.8W, DPAK Min Qty: 1 | 0 |
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$1.1500 / $1.7200 | RFQ |
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DISTI #
NTDS015N15MCT4G
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Avnet Silica | Transistor MOSFET NCH 150V 50A 15mOhm 4Pin DPAK Tube (Alt: NTDS015N15MCT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NTDS015N15MCT4G
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Avnet Silica | Transistor MOSFET NCH 150V 50A 15mOhm 4Pin DPAK Tube (Alt: NTDS015N15MCT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for NTDS015N15MCT4G
NTDS015N15MCT4G CAD Models
NTDS015N15MCT4G Part Data Attributes
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NTDS015N15MCT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTDS015N15MCT4G
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 15 mΩ, DPAK-3, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10.5 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 246 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
NTDS015N15MCT4G Frequently Asked Questions (FAQ)
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The recommended PCB footprint for NTDS015N15MCT4G is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure reliable operation in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C.
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The maximum allowed voltage on the gate of NTDS015N15MCT4G is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation and prevent damage to the device.
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Yes, NTDS015N15MCT4G can be used in switching applications, but it is recommended to follow proper switching guidelines, such as using a gate driver, minimizing switching losses, and ensuring the device is operated within its safe operating area (SOA).
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The power dissipation of NTDS015N15MCT4G can be calculated using the formula Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.