Part Details for NTB125N02R by onsemi
Results Overview of NTB125N02R by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
NTB125N02R Information
NTB125N02R by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NTB125N02R
NTB125N02R CAD Models
NTB125N02R Part Data Attributes
|
|
NTB125N02R
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTB125N02R
onsemi
95A, 25V, 0.0062ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418AA-01, D2PAK-3
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | CASE 418AA-01, D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 418AA-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 95 A | |
| Drain-source On Resistance-Max | 0.0062 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 113.6 W | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTB125N02R
This table gives cross-reference parts and alternative options found for NTB125N02R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB125N02R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTB125N02RG | onsemi | Check for Price | Power MOSFET 125 Amps, 24 Volts, N-channel D2PAK and TO-220, D2PAK 2 LEAD, 50-TUBE | NTB125N02R vs NTB125N02RG |
| NTB125N02RT4G | onsemi | Check for Price | Power MOSFET 125 Amps, 24 Volts, N-channel D2PAK and TO-220, D2PAK 2 LEAD, 800-REEL | NTB125N02R vs NTB125N02RT4G |
| NTB125N02RT4 | onsemi | Check for Price | 95A, 25V, 0.0062ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 418AA-01, D2PAK-3 | NTB125N02R vs NTB125N02RT4 |