Part Details for NSVBAS116LT3G by onsemi
Results Overview of NSVBAS116LT3G by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Aerospace and Defense
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NSVBAS116LT3G Information
NSVBAS116LT3G by onsemi is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for NSVBAS116LT3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68X4335
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Newark | 75 V Switching Diode/ Reel |Onsemi NSVBAS116LT3G RoHS: Not Compliant Min Qty: 20000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0140 / $0.0150 | Buy Now |
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DISTI #
488-NSVBAS116LT3GCT-ND
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DigiKey | DIODE STANDARD 75V 200MA SOT233 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
10733 In Stock |
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$0.0131 / $0.1000 | Buy Now |
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DISTI #
NSVBAS116LT3G
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Avnet Americas | - Tape and Reel (Alt: NSVBAS116LT3G) RoHS: Compliant Min Qty: 50000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.0137 / $0.0140 | Buy Now |
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DISTI #
863-NSVBAS116LT3G
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Mouser Electronics | Small Signal Switching Diodes 75V SWITCH DIODE SS SOT23 RoHS: Compliant | 7485 |
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$0.0140 / $0.1000 | Buy Now |
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Onlinecomponents.com | 75 V Switching Diode RoHS: Compliant | 0 |
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$0.0123 / $0.0143 | Buy Now |
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DISTI #
86016840
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Verical | Diode Small Signal Switching 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 9837 Package Multiple: 1 Date Code: 1601 | Americas - 190000 |
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$0.0381 | Buy Now |
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Rochester Electronics | 75 V Switching Diode RoHS: Compliant Status: Active Min Qty: 1 | 190000 |
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$0.0189 / $0.0305 | Buy Now |
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DISTI #
NSVBAS116LT3G
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Avnet Silica | (Alt: NSVBAS116LT3G) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 11 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NSVBAS116LT3G
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EBV Elektronik | (Alt: NSVBAS116LT3G) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 19400 |
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RFQ |
Part Details for NSVBAS116LT3G
NSVBAS116LT3G CAD Models
NSVBAS116LT3G Part Data Attributes
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NSVBAS116LT3G
onsemi
Buy Now
Datasheet
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Compare Parts:
NSVBAS116LT3G
onsemi
75 V Switching Diode, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 10000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.70 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Application | GENERAL PURPOSE | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Non-rep Pk Forward Current-Max | 2 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 0.2 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Power Dissipation-Max | 0.225 W | |
| Reference Standard | AEC-Q101 | |
| Rep Pk Reverse Voltage-Max | 75 V | |
| Reverse Recovery Time-Max | 3 µs | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
NSVBAS116LT3G Frequently Asked Questions (FAQ)
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A good PCB layout for the NSVBAS116LT3G involves keeping the input and output traces short and separate, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
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To ensure proper biasing, connect the VCC pin to a stable 3.3V power supply, and the VEE pin to a stable -3.3V power supply. The input common-mode voltage should be set to around 1.65V, and the output should be terminated with a 50Ω load to ground.
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The NSVBAS116LT3G is specified to operate up to 3.2 GHz, but it can be used at higher frequencies with some degradation in performance. However, it's essential to consult with onsemi's application engineers or perform thorough testing to ensure the device meets the specific requirements of your application.
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The NSVBAS116LT3G has built-in ESD protection, but it's still essential to follow proper ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or exposed internal components.
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The NSVBAS116LT3G has a maximum junction temperature of 150°C. To ensure reliable operation, keep the device's junction temperature below 125°C. Use a heat sink or thermal pad on the exposed pad of the QFN package, and ensure good airflow around the device.