Part Details for NJVMJD42CT4G by onsemi
Results Overview of NJVMJD42CT4G by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NJVMJD42CT4G Information
NJVMJD42CT4G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NJVMJD42CT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
76T6465
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Newark | 6.0 A, 100 V Pnp Bipolar Power Transistor/ Reel Rohs Compliant: Yes |Onsemi NJVMJD42CT4G RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2650 / $0.3540 | Buy Now |
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DISTI #
488-NJVMJD42CT4GCT-ND
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DigiKey | TRANS PNP 100V 6A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2444 In Stock |
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$0.2567 / $1.1900 | Buy Now |
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DISTI #
NJVMJD42CT4G
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Avnet Americas | Trans GP BJT PNP 100V 6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: NJVMJD42CT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2304 / $0.2633 | Buy Now |
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DISTI #
863-NJVMJD42CT4G
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Mouser Electronics | Bipolar Transistors - BJT SILICON Pwr TRANSISTOR RoHS: Compliant | 0 |
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$0.3090 / $1.1900 | Order Now |
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Onlinecomponents.com | 6.0 A, 100 V PNP Bipolar Power Transistor RoHS: Compliant | 0 |
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$0.2447 / $0.2668 | Buy Now |
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Bristol Electronics | 5000 |
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RFQ | ||
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ComSIT USA | Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
NJVMJD42CT4G
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Avnet Asia | Trans GP BJT PNP 100V 6A 3-Pin(2+Tab) DPAK T/R (Alt: NJVMJD42CT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | 0 |
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$0.2417 / $0.2703 | Buy Now |
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DISTI #
NJVMJD42CT4G
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Avnet Silica | Trans GP BJT PNP 100V 6A 3Pin2Tab DPAK TR (Alt: NJVMJD42CT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NJVMJD42CT4G
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EBV Elektronik | Trans GP BJT PNP 100V 6A 3Pin2Tab DPAK TR (Alt: NJVMJD42CT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NJVMJD42CT4G
NJVMJD42CT4G CAD Models
NJVMJD42CT4G Part Data Attributes
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NJVMJD42CT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NJVMJD42CT4G
onsemi
6.0 A, 100 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 6 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 15 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 20 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 3 MHz |
NJVMJD42CT4G Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the NJVMJD42CT4G is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
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To ensure proper thermal management, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the MOSFET is mounted on a heat sink with a thermal resistance of less than 10°C/W.
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The maximum allowed voltage for the NJVMJD42CT4G's gate-source voltage (Vgs) is ±20V, but it's recommended to keep it between -5V and +15V for reliable operation.
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Yes, the NJVMJD42CT4G is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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Handle the NJVMJD42CT4G with ESD-protective equipment, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.