Part Details for NDT3055L by Texas Instruments
Results Overview of NDT3055L by Texas Instruments
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NDT3055L Information
NDT3055L by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NDT3055L
NDT3055L CAD Models
NDT3055L Part Data Attributes
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NDT3055L
Texas Instruments
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Datasheet
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NDT3055L
Texas Instruments
3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.7 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261 | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1.1 W | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 70 ns | |
| Turn-on Time-Max (ton) | 40 ns |
NDT3055L Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2oz copper thickness, and ensuring good thermal conduction to the surrounding copper area. A thermal via array can also be used to improve heat dissipation.
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To ensure reliable operation at high temperatures, it is essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
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To prevent damage, handle the device by the body and avoid touching the leads or pins. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and follow ESD precautions when handling the device.
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While the NDT3055L is a general-purpose device, it may not meet the specific requirements for high-reliability or automotive applications. National Semiconductor Corporation offers other devices that are specifically designed and qualified for these applications, such as the Automotive Grade or High-Reliability versions.
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To troubleshoot common issues, start by checking the device's operating conditions, including voltage, current, and temperature. Verify that the device is properly soldered and that there are no signs of physical damage. Use a thermal camera or thermometer to check for overheating, and consult the datasheet and application notes for guidance on troubleshooting specific issues.