Datasheets
NDT2955_NL by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for NDT2955_NL by Fairchild Semiconductor Corporation

Results Overview of NDT2955_NL by Fairchild Semiconductor Corporation

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NDT2955_NL Information

NDT2955_NL by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NDT2955_NL

Part # Distributor Description Stock Price Buy
Vyrian Transistors 91
RFQ

Part Details for NDT2955_NL

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NDT2955_NL Part Data Attributes

NDT2955_NL Fairchild Semiconductor Corporation
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NDT2955_NL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 174 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDT2955_NL

This table gives cross-reference parts and alternative options found for NDT2955_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT2955_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NDT2955 onsemi $0.3093 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, SOT-223-4 / TO-261-4, 4000-REEL NDT2955_NL vs NDT2955
NDT2955 Rochester Electronics LLC Check for Price 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET NDT2955_NL vs NDT2955
Part Number Manufacturer Composite Price Description Compare
IRFL9014PBF International Rectifier Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 NDT2955_NL vs IRFL9014PBF
IRFL9014PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 NDT2955_NL vs IRFL9014PBF
BSP170P Infineon Technologies AG Check for Price Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4 NDT2955_NL vs BSP170P
BSP170PL6327 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 NDT2955_NL vs BSP170PL6327
IRFL9014TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, NDT2955_NL vs IRFL9014TRPBF
BSP170P Siemens Check for Price Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET NDT2955_NL vs BSP170P
IRFL9014TR International Rectifier Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA NDT2955_NL vs IRFL9014TR
RFT1P06E Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET NDT2955_NL vs RFT1P06E
BSP613P Infineon Technologies AG Check for Price Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN NDT2955_NL vs BSP613P
IRFL9014 International Rectifier Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA NDT2955_NL vs IRFL9014

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