Part Details for NDS331N by Texas Instruments
Results Overview of NDS331N by Texas Instruments
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- Part Data Attributes: (Available)
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Energy and Power Systems
Renewable Energy
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NDS331N Information
NDS331N by Texas Instruments is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NDS331N
NDS331N CAD Models
NDS331N Part Data Attributes
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NDS331N
Texas Instruments
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Datasheet
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NDS331N
Texas Instruments
1300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 1.3 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.46 W | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
NDS331N Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the NDS331N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
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To ensure the NDS331N is properly biased for linear operation, you should follow the recommended biasing conditions outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) and collector-emitter voltage (VCE) within the specified ranges, and ensuring the device is operated within the recommended current and power dissipation limits.
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The recommended PCB layout and thermal management for the NDS331N involve using a thermally conductive PCB material, placing the device on a heat sink or thermal pad, and ensuring good airflow around the device. You should also follow good PCB design practices, such as minimizing thermal resistance, using thermal vias, and avoiding thermal hotspots.
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To handle ESD protection for the NDS331N, you should follow standard ESD protection practices, such as using ESD-sensitive device handling procedures, implementing ESD protection circuits or devices, and ensuring the device is properly grounded and shielded.
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The reliability and lifespan expectations for the NDS331N are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. As a general rule, the device is expected to meet the specified reliability and lifespan expectations outlined in the datasheet, but actual performance may vary depending on the specific application and operating conditions.