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Part Details for NDF10N60ZG by onsemi
Results Overview of NDF10N60ZG by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NDF10N60ZG Information
NDF10N60ZG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NDF10N60ZG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86005467
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Verical | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Rail Min Qty: 421 Package Multiple: 1 Date Code: 1301 | Americas - 77983 |
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$0.8918 | Buy Now |
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DISTI #
86016112
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Verical | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Rail Min Qty: 421 Package Multiple: 1 Date Code: 1201 | Americas - 19459 |
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$0.8918 | Buy Now |
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DISTI #
86015873
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Verical | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Rail Min Qty: 421 Package Multiple: 1 | Americas - 2450 |
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$0.8918 | Buy Now |
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Rochester Electronics | 6A, 600V, 0.75ohm, N-Channel Power MOSFET, TO-220AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 100402 |
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$0.4423 / $0.7134 | Buy Now |
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Vyrian | Transistors | 92603 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 600V 10A TO-220FP / Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube | 7501 |
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$0.5440 / $0.8166 | Buy Now |
Part Details for NDF10N60ZG
NDF10N60ZG CAD Models
NDF10N60ZG Part Data Attributes
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NDF10N60ZG
onsemi
Buy Now
Datasheet
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Compare Parts:
NDF10N60ZG
onsemi
Power MOSFET 600V 10A 0.75 Ù Single N-Channel TO-220FP, TO-220 3 LEAD FULLPAK, 50-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220 3 LEAD FULLPAK | |
| Package Description | FULL PACK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 221AH | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 39 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for NDF10N60ZG
This table gives cross-reference parts and alternative options found for NDF10N60ZG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDF10N60ZG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDF10N60ZH | onsemi | Check for Price | Power MOSFET 600V 10A 0.75 Ù Single N-Channel TO-220FP Optimized, TO-220 FULLPACK, 3-LEAD, 50-TUBE | NDF10N60ZG vs NDF10N60ZH |
| 2SK4088LS | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | NDF10N60ZG vs 2SK4088LS |
| 2SK4088LS | onsemi | Check for Price | 11A, 650V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FI(LS), 3 PIN | NDF10N60ZG vs 2SK4088LS |
NDF10N60ZG Frequently Asked Questions (FAQ)
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The maximum SOA for the NDF10N60ZG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the maximum SOA is typically limited by the device's thermal resistance (RθJA) and the maximum junction temperature (Tj). For the NDF10N60ZG, the maximum SOA is approximately 10A at 25°C and 5A at 100°C.
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To ensure optimal performance, the NDF10N60ZG should be biased with a gate-source voltage (Vgs) between 4V and 10V, and a drain-source voltage (Vds) within the recommended operating range. Additionally, the device should be operated within the recommended temperature range (-55°C to 150°C) and with a suitable heat sink to maintain a safe junction temperature.
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For optimal thermal performance, it is recommended to use a multi-layer PCB with a thermal via structure to dissipate heat efficiently. The device should be mounted on a heat sink with a thermal interface material (TIM) to minimize thermal resistance. A minimum of 2oz copper thickness is recommended for the PCB, and the device should be placed near a thermal pad or heat sink to ensure efficient heat dissipation.
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The NDF10N60ZG has an internal ESD protection diode, but additional external protection may be necessary depending on the application. It is recommended to use a TVS (transient voltage suppressor) diode or a Zener diode in parallel with the device to protect against electrostatic discharge (ESD) and overvoltage events.
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The NDF10N60ZG is a high-reliability device with a typical lifespan of 10-15 years or more, depending on the application and operating conditions. The device is designed to meet the requirements of AEC-Q101, which ensures high reliability and robustness in automotive and industrial applications.