Part Details for NDF06N62ZG by onsemi
Results Overview of NDF06N62ZG by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
NDF06N62ZG Information
NDF06N62ZG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NDF06N62ZG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86004463
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Verical | Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 464 Package Multiple: 1 Date Code: 1101 | Americas - 5350 |
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$0.5016 / $0.8091 | Buy Now |
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Rochester Electronics | 6A, 620V, 1.2ohm, N-Channel Power MOSFET, TO-220AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 5350 |
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$0.4013 / $0.6473 | Buy Now |
Part Details for NDF06N62ZG
NDF06N62ZG CAD Models
NDF06N62ZG Part Data Attributes
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NDF06N62ZG
onsemi
Buy Now
Datasheet
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Compare Parts:
NDF06N62ZG
onsemi
Power MOSFET 620V 3.8A 1.2 Ohm Single N-Channel TO220FP, TO-220 3 LEAD FULLPAK, 50-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220 3 LEAD FULLPAK | |
| Package Description | ROHS COMPLIANT, CASE 221A-09, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 221AH | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 113 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 620 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |