Part Details for NAND512W3A2CZA6E by Micron Technology Inc
Results Overview of NAND512W3A2CZA6E by Micron Technology Inc
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
NAND512W3A2CZA6E Information
NAND512W3A2CZA6E by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for NAND512W3A2CZA6E
NAND512W3A2CZA6E CAD Models
NAND512W3A2CZA6E Part Data Attributes
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NAND512W3A2CZA6E
Micron Technology Inc
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Datasheet
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NAND512W3A2CZA6E
Micron Technology Inc
Flash, 64MX8, 35ns, PBGA64
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 35 ns | |
| Command User Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PBGA-B64 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Sectors/Size | 4K | |
| Number of Terminals | 64 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 64MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA64,10X12,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Page Size | 512 words | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Sector Size | 16K | |
| Standby Current-Max | 0.00005 A | |
| Supply Current-Max | 0.02 mA | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Toggle Bit | NO | |
| Type | SLC NAND TYPE |
NAND512W3A2CZA6E Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the NAND512W3A2CZA6E is -40°C to 85°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically -40°C to 150°C.
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The NAND512W3A2CZA6E has a built-in bad block management mechanism. During manufacturing, Micron marks bad blocks as invalid. When a block is marked bad, the device will not allow programming or erasing operations on that block. It's recommended to use the device's built-in error correction code (ECC) and bad block management features to ensure data integrity and reliability.
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The typical write endurance of the NAND512W3A2CZA6E is around 3,000 to 5,000 program/erase cycles per block, depending on the specific application and usage patterns. However, it's essential to note that the actual write endurance may vary depending on factors such as operating temperature, write patterns, and error correction mechanisms.
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To ensure data retention and prevent data loss due to power failures, it's recommended to implement a power-fail interrupt (PFI) mechanism in your system design. This allows the system to detect power failures and take necessary actions to prevent data loss. Additionally, using a capacitor or other energy storage device to provide a brief power hold-up during power failures can help prevent data loss.
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The recommended method for programming and erasing the NAND512W3A2CZA6E is to use the device's built-in programming and erasing commands, as specified in the datasheet. It's essential to follow the recommended programming and erasing procedures to ensure data integrity and prevent device damage.