Part Details for NAND512R3A2CZA6E by Micron Technology Inc
Results Overview of NAND512R3A2CZA6E by Micron Technology Inc
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
NAND512R3A2CZA6E Information
NAND512R3A2CZA6E by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for NAND512R3A2CZA6E
NAND512R3A2CZA6E CAD Models
NAND512R3A2CZA6E Part Data Attributes
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NAND512R3A2CZA6E
Micron Technology Inc
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Datasheet
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NAND512R3A2CZA6E
Micron Technology Inc
Flash, 64MX8, 45ns, PBGA64
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | Micron | |
| Access Time-Max | 45 ns | |
| Command User Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PBGA-B64 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Sectors/Size | 4K | |
| Number of Terminals | 64 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 64MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA64,10X12,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Page Size | 512 words | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Sector Size | 16K | |
| Standby Current-Max | 0.00005 A | |
| Supply Current-Max | 0.015 mA | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Toggle Bit | NO | |
| Type | SLC NAND TYPE |
NAND512R3A2CZA6E Frequently Asked Questions (FAQ)
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The NAND512R3A2CZA6E supports up to 3,000 program/erase cycles, which is a typical value for most NAND flash devices.
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Bad blocks are typically handled by the flash file system or the operating system. The NAND512R3A2CZA6E has a bad block management mechanism that allows the device to mark bad blocks and prevent them from being used. The host system can also implement its own bad block management scheme.
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The optimal read and write buffer size depends on the specific application and use case. However, a typical buffer size for NAND flash devices is around 4KB to 16KB. The NAND512R3A2CZA6E has a page size of 4KB, so a buffer size of 4KB or 8KB would be a good starting point.
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The NAND512R3A2CZA6E has built-in error correction code (ECC) that can detect and correct errors. Additionally, the host system can implement its own error correction mechanisms, such as checksums or cyclic redundancy checks (CRCs), to ensure data integrity.
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The typical power consumption of the NAND512R3A2CZA6E is around 50mA for read operations and 30mA for write operations. However, the actual power consumption may vary depending on the specific use case and operating conditions.