Part Details for NAND256W3A2BZAXE by Micron Technology Inc
Results Overview of NAND256W3A2BZAXE by Micron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
NAND256W3A2BZAXE Information
NAND256W3A2BZAXE by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for NAND256W3A2BZAXE
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NAND256W3A2BZAXE
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Avnet Silica | (Alt: NAND256W3A2BZAXE) RoHS: Compliant Min Qty: 1518 Package Multiple: 1518 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Part Details for NAND256W3A2BZAXE
NAND256W3A2BZAXE CAD Models
NAND256W3A2BZAXE Part Data Attributes
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NAND256W3A2BZAXE
Micron Technology Inc
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Datasheet
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NAND256W3A2BZAXE
Micron Technology Inc
Flash, 32MX8, 45ns, PBGA55, VFBGA-55
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | TFBGA, BGA55,8X12,32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | Micron | |
| Access Time-Max | 45 ns | |
| Command User Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PBGA-B55 | |
| Length | 10 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 2K | |
| Number of Terminals | 55 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA55,8X12,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Page Size | 512 words | |
| Parallel/Serial | PARALLEL | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.05 mm | |
| Sector Size | 16K | |
| Standby Current-Max | 0.00005 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Toggle Bit | NO | |
| Type | SLC NAND TYPE | |
| Width | 8 mm |
Alternate Parts for NAND256W3A2BZAXE
This table gives cross-reference parts and alternative options found for NAND256W3A2BZAXE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NAND256W3A2BZAXE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NAND256W3A2BN6F | Micron Technology Inc | Check for Price | Flash, 32MX8, 35ns, PDSO48, TSOP-48 | NAND256W3A2BZAXE vs NAND256W3A2BN6F |
NAND256W3A2BZAXE Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the NAND256W3A2BZAXE is -40°C to 85°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically -40°C to 150°C.
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The NAND256W3A2BZAXE requires a specific power-up sequence to ensure proper operation. The recommended sequence is to apply VCC first, followed by VCCQ, and then the clock signal. The device will then undergo a POR, which takes around 10ms. After POR, the device is ready for commands.
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The NAND256W3A2BZAXE is rated for a minimum of 3,000 program/erase cycles per block, with a maximum of 10,000 cycles per block. However, the actual number of cycles may vary depending on the specific use case and operating conditions.
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The NAND256W3A2BZAXE does not have built-in bad block management or wear leveling. It's the responsibility of the system designer to implement these mechanisms in the firmware or software to ensure the device's reliability and longevity.
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The typical write endurance for the NAND256W3A2BZAXE is around 1-2 GB per day, assuming a typical usage pattern. However, this value can vary depending on the specific application, write patterns, and operating conditions.