Datasheets
NAND256W3A2AN6E by:

32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

Part Details for NAND256W3A2AN6E by STMicroelectronics

Results Overview of NAND256W3A2AN6E by STMicroelectronics

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Applications Education and Research Computing and Data Storage Energy and Power Systems

NAND256W3A2AN6E Information

NAND256W3A2AN6E by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for NAND256W3A2AN6E

Part # Distributor Description Stock Price Buy
Quest Components IC,EEPROM,NAND FLASH,32MX8,CMOS,TSSOP,48PIN,PLASTIC 267
  • 1 $13.5000
  • 91 $10.5000
  • 191 $9.6000
$9.6000 / $13.5000 Buy Now
Quest Components IC,EEPROM,NAND FLASH,32MX8,CMOS,TSSOP,48PIN,PLASTIC 30
  • 1 $12.0000
  • 5 $9.0000
  • 29 $7.8000
$7.8000 / $12.0000 Buy Now

Part Details for NAND256W3A2AN6E

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NAND256W3A2AN6E Part Data Attributes

NAND256W3A2AN6E STMicroelectronics
Buy Now Datasheet
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NAND256W3A2AN6E STMicroelectronics 32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TSOP
Package Description 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
Pin Count 48
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.51
Samacsys Manufacturer STMicroelectronics
Access Time-Max 12000 ns
Command User Interface YES
Data Polling NO
JESD-30 Code R-PDSO-G48
JESD-609 Code e3/e6
Length 18.4 mm
Memory Density 268435456 bit
Memory IC Type FLASH
Memory Width 8
Number of Functions 1
Number of Sectors/Size 2K
Number of Terminals 48
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX8
Package Body Material PLASTIC/EPOXY
Package Code TSOP1
Package Equivalence Code TSSOP48,.8,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Page Size 512 words
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Programming Voltage 3 V
Qualification Status Not Qualified
Ready/Busy YES
Seated Height-Max 1.2 mm
Sector Size 16K
Standby Current-Max 0.00005 A
Supply Current-Max 0.02 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN/TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Toggle Bit NO
Type SLC NAND TYPE
Width 12 mm

Alternate Parts for NAND256W3A2AN6E

This table gives cross-reference parts and alternative options found for NAND256W3A2AN6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NAND256W3A2AN6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NAND256W3A0AN6E Micron Technology Inc Check for Price Flash, 32MX8, 35ns, PDSO48, TSOP-48 NAND256W3A2AN6E vs NAND256W3A0AN6E
NAND256W3A2BN6E Numonyx Memory Solutions Check for Price Flash, 32MX8, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 NAND256W3A2AN6E vs NAND256W3A2BN6E
NAND256W3A0AN6 STMicroelectronics Check for Price 32MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 NAND256W3A2AN6E vs NAND256W3A0AN6
NAND256W3A2AN6 STMicroelectronics Check for Price 32MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 NAND256W3A2AN6E vs NAND256W3A2AN6
Part Number Manufacturer Composite Price Description Compare
NAND256R3A0DN1F STMicroelectronics Check for Price 32MX8 FLASH 1.8V PROM, 15000ns, PDSO48, 12 X 20 MM, TSOP-48 NAND256W3A2AN6E vs NAND256R3A0DN1F
NAND256R3A1AV1E STMicroelectronics Check for Price 32MX8 FLASH 1.8V PROM, 10000ns, PDSO48, 12 X 17 MM, LEAD FREE, PLASTIC, WSOP-48 NAND256W3A2AN6E vs NAND256R3A1AV1E
NAND256W3A3BN6 STMicroelectronics Check for Price 32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48 NAND256W3A2AN6E vs NAND256W3A3BN6
NAND256W3A0BN6E STMicroelectronics Check for Price 32MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 NAND256W3A2AN6E vs NAND256W3A0BN6E
NAND256R3A2DN6E STMicroelectronics Check for Price 32MX8 FLASH 1.8V PROM, 15000ns, PDSO48, 12 X 20 MM, TSOP-48 NAND256W3A2AN6E vs NAND256R3A2DN6E
HY27US08561M-TIB SK Hynix Inc Check for Price Flash, 32MX8, 10000ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48 NAND256W3A2AN6E vs HY27US08561M-TIB
NAND256R3A2BN1T Numonyx Memory Solutions Check for Price Flash, 32MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 NAND256W3A2AN6E vs NAND256R3A2BN1T
NAND256R3A0CV1E STMicroelectronics Check for Price 32MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48 NAND256W3A2AN6E vs NAND256R3A0CV1E
NAND256W3AACN6F Micron Technology Inc Check for Price Flash, 32MX8, 35ns, PDSO48, TSOP-48 NAND256W3A2AN6E vs NAND256W3AACN6F
NAND256R3A0DN1E STMicroelectronics Check for Price 32MX8 FLASH 1.8V PROM, 15000ns, PDSO48, 12 X 20 MM, TSOP-48 NAND256W3A2AN6E vs NAND256R3A0DN1E

NAND256W3A2AN6E Related Parts

NAND256W3A2AN6E Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for NAND256W3A2AN6E is -40°C to 85°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically -65°C to 150°C.

  • The NAND256W3A2AN6E requires a specific power-up sequence to ensure proper initialization. It's recommended to follow the power-up sequence outlined in the datasheet, which involves applying VCC first, followed by VPP, and then the clock signal. Additionally, the device requires a POR pulse to reset the internal state machines.

  • The maximum number of program/erase cycles for the NAND256W3A2AN6E is 3,000 to 5,000 cycles, depending on the specific application and usage conditions. It's essential to follow the recommended usage guidelines and wear-leveling techniques to minimize wear and extend the device's lifespan.

  • The NAND256W3A2AN6E uses a BCH error correction code (ECC) to detect and correct errors. It's recommended to implement a ECC algorithm in the host controller to detect and correct errors. Additionally, the device provides a built-in ECC generator and checker to assist in error detection and correction.

  • The NAND256W3A2AN6E supports the standard NAND flash interface protocol, which includes commands, addresses, and data transfer protocols. It's recommended to follow the protocol outlined in the datasheet and industry standards to ensure compatibility and reliable operation.

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