Part Details for NAND01GW3B2CZA6E by STMicroelectronics
Results Overview of NAND01GW3B2CZA6E by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Computing and Data Storage
Energy and Power Systems
NAND01GW3B2CZA6E Information
NAND01GW3B2CZA6E by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for NAND01GW3B2CZA6E
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | FLASH, 128MX8, 25000NS, PBGA63 | 88 |
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$4.6060 / $9.8700 | Buy Now |
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Quest Components | FLASH, 128MX8, 25000NS, PBGA63 | 19 |
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$13.0000 / $20.0000 | Buy Now |
Part Details for NAND01GW3B2CZA6E
NAND01GW3B2CZA6E CAD Models
NAND01GW3B2CZA6E Part Data Attributes
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NAND01GW3B2CZA6E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
NAND01GW3B2CZA6E
STMicroelectronics
128MX8 FLASH 3V PROM, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | BGA | |
| Package Description | TFBGA, | |
| Pin Count | 63 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 25000 ns | |
| JESD-30 Code | R-PBGA-B63 | |
| Length | 11 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Terminals | 63 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 128MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.05 mm | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 9 mm |
Alternate Parts for NAND01GW3B2CZA6E
This table gives cross-reference parts and alternative options found for NAND01GW3B2CZA6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NAND01GW3B2CZA6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NAND01GW3B2AZA6F | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2AZA6F |
| NAND01GW3B2AZA1E | Micron Technology Inc | Check for Price | Flash, 128MX8, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2AZA1E |
| NAND01GW3B2CZA6E | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2CZA6E |
| NAND01GW3B2BZA1E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2BZA1E |
| NAND01GW3B2BZA6F | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2BZA6F |
| NAND01GW3B2BZA6E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2BZA6E |
| NAND01GW3B2CZA1F | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2CZA1F |
| NAND01GW3B2AZA6E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2AZA6E |
| NAND01GW3B2CZA6F | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 | NAND01GW3B2CZA6E vs NAND01GW3B2CZA6F |
NAND01GW3B2CZA6E Frequently Asked Questions (FAQ)
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The recommended operating temperature range for NAND01GW3B2CZA6E is -40°C to 85°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, which is -65°C to 150°C.
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To ensure proper operation, it's crucial to follow the recommended power-up and power-down sequences. During power-up, VCC should be applied before VPP, and during power-down, VPP should be removed before VCC. Additionally, it's recommended to add a 10kΩ pull-up resistor on the CE# pin to prevent unwanted writes during power-up.
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The maximum number of program/erase cycles for NAND01GW3B2CZA6E is 3,000 cycles per block, as specified in the datasheet. However, it's essential to note that the actual number of cycles may vary depending on the specific use case and operating conditions.
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The NAND01GW3B2CZA6E does not have built-in error correction and detection mechanisms. Therefore, it's recommended to implement external error correction and detection mechanisms, such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check), to ensure data integrity and reliability.
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The recommended method for bad block management in NAND01GW3B2CZA6E is to use a combination of factory-marked bad blocks and field-programmable bad block management. This involves identifying and marking bad blocks during manufacturing and allowing the system to dynamically mark additional bad blocks during operation.