Part Details for NAND01GW3B2AN6F by STMicroelectronics
Results Overview of NAND01GW3B2AN6F by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
NAND01GW3B2AN6F Information
NAND01GW3B2AN6F by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for NAND01GW3B2AN6F
NAND01GW3B2AN6F CAD Models
NAND01GW3B2AN6F Part Data Attributes
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NAND01GW3B2AN6F
STMicroelectronics
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Datasheet
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NAND01GW3B2AN6F
STMicroelectronics
128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TSOP | |
| Package Description | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Access Time-Max | 25000 ns | |
| Command User Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3/e6 | |
| Length | 18.4 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1K | |
| Number of Terminals | 48 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 128MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP1 | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Page Size | 2K words | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 128K | |
| Standby Current-Max | 0.00005 A | |
| Supply Current-Max | 0.03 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN/TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Toggle Bit | NO | |
| Width | 12 mm |
Alternate Parts for NAND01GW3B2AN6F
This table gives cross-reference parts and alternative options found for NAND01GW3B2AN6F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NAND01GW3B2AN6F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NAND01GW3B2CV6E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2CV6E |
| NAND01GW3B2BN1F | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2BN1F |
| NAND01GW3B2BN1E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2BN1E |
| NAND01GW3B2BV6 | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2BV6 |
| NAND01GW3B2BV1E | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2BV1E |
| NAND01GW3B2CN1E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2CN1E |
| NAND01GW3B2CV1 | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2CV1 |
| NAND01GW3B2BV1E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2BV1E |
| NAND01GW3B2BV6T | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2BV6T |
| NAND01GW3B2AN1E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | NAND01GW3B2AN6F vs NAND01GW3B2AN1E |
NAND01GW3B2AN6F Frequently Asked Questions (FAQ)
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The recommended operating temperature range for NAND01GW3B2AN6F is -40°C to 85°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, which is -65°C to 150°C.
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To ensure proper operation, it's crucial to follow the recommended power-up and power-down sequences. During power-up, VCC should be applied before VPP, and during power-down, VPP should be removed before VCC. Additionally, the device should be in a standby mode (CE# high) during power-up and power-down.
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The maximum number of program/erase cycles for NAND01GW3B2AN6F is 3,000 cycles per block, as specified in the datasheet. However, it's essential to note that the actual number of cycles may vary depending on the specific use case and operating conditions.
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Bad blocks in NAND01GW3B2AN6F can be identified using the built-in bad block detection mechanism. When a bad block is detected, it's essential to mark it as bad and avoid using it for further programming or erasing. This can be done using the device's built-in commands or through software-based bad block management.
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The recommended method for reading and writing data to NAND01GW3B2AN6F involves using the device's built-in commands, such as the page read and program commands. It's essential to follow the datasheet's guidelines for command sequences, timing, and data formatting to ensure reliable operation.