Part Details for MWI200-06A8 by Littelfuse Inc
Results Overview of MWI200-06A8 by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MWI200-06A8 Information
MWI200-06A8 by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MWI200-06A8
MWI200-06A8 CAD Models
MWI200-06A8 Part Data Attributes
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MWI200-06A8
Littelfuse Inc
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Datasheet
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MWI200-06A8
Littelfuse Inc
Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-XUFM-X19 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 225 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X19 | |
JESD-609 Code | e3 | |
Number of Elements | 6 | |
Number of Terminals | 19 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 675 W | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 340 ns | |
Turn-on Time-Nom (ton) | 230 ns | |
VCEsat-Max | 2.5 V |
Alternate Parts for MWI200-06A8
This table gives cross-reference parts and alternative options found for MWI200-06A8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MWI200-06A8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MG200J6ES60 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, 2-123B1A, 17 PIN, Insulated Gate BIP Transistor | MWI200-06A8 vs MG200J6ES60 |
CM200TU-12F | Mitsubishi Electric | Check for Price | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-17 | MWI200-06A8 vs CM200TU-12F |
CM200TU-12F | Powerex Power Semiconductors | Check for Price | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel | MWI200-06A8 vs CM200TU-12F |
BSM200GD60DLC | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, MODULE-39 | MWI200-06A8 vs BSM200GD60DLC |
BSM200GD60DLCBOSA1 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, MODULE-39 | MWI200-06A8 vs BSM200GD60DLCBOSA1 |