Datasheets
MWI200-06A8 by:

Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19

Part Details for MWI200-06A8 by Littelfuse Inc

Results Overview of MWI200-06A8 by Littelfuse Inc

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MWI200-06A8 Information

MWI200-06A8 by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MWI200-06A8

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MWI200-06A8 Part Data Attributes

MWI200-06A8 Littelfuse Inc
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MWI200-06A8 Littelfuse Inc Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer LITTELFUSE INC
Package Description FLANGE MOUNT, R-XUFM-X19
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Case Connection ISOLATED
Collector Current-Max (IC) 225 A
Collector-Emitter Voltage-Max 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X19
JESD-609 Code e3
Number of Elements 6
Number of Terminals 19
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 675 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 340 ns
Turn-on Time-Nom (ton) 230 ns
VCEsat-Max 2.5 V

Alternate Parts for MWI200-06A8

This table gives cross-reference parts and alternative options found for MWI200-06A8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MWI200-06A8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MG200J6ES60 Toshiba America Electronic Components Check for Price TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, 2-123B1A, 17 PIN, Insulated Gate BIP Transistor MWI200-06A8 vs MG200J6ES60
CM200TU-12F Mitsubishi Electric Check for Price Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-17 MWI200-06A8 vs CM200TU-12F
CM200TU-12F Powerex Power Semiconductors Check for Price Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel MWI200-06A8 vs CM200TU-12F
BSM200GD60DLC Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, MODULE-39 MWI200-06A8 vs BSM200GD60DLC
BSM200GD60DLCBOSA1 Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, MODULE-39 MWI200-06A8 vs BSM200GD60DLCBOSA1

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