MW7IC2725GNR1 by:

2300MHz - 2700MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

Part Details for MW7IC2725GNR1 by NXP Semiconductors

Results Overview of MW7IC2725GNR1 by NXP Semiconductors

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Applications Telecommunications

MW7IC2725GNR1 Information

MW7IC2725GNR1 by NXP Semiconductors is an RF/Microwave Amplifier.
RF/Microwave Amplifiers are under the broader part category of RF and Microwave Components.

RF and Microwave Engineering focuses on the design and operation of devices that transmit or receive radio waves. The main distinction between RF and microwave engineering is their wavelength, which influences how energy is transmitted and used in various applications. Read more about RF and Microwave Components on our RF and Microwave part category page.

Price & Stock for MW7IC2725GNR1

Part # Distributor Description Stock Price Buy
DISTI # MW7IC2725GNR1-ND
DigiKey IC RF AMP WIMAX 2.7GHZ TO270 Min Qty: 500 Lead time: 26 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 500 $51.2850
$51.2850 Buy Now
DISTI # 86011935
Verical RF Amp Single Power Amp 2.7GHz 32V 17-Pin TO-270 W GULL T/R Min Qty: 25 Package Multiple: 1 Date Code: 2201 Americas - 1716
  • 25 $70.4500
$70.4500 Buy Now
Rochester Electronics MW7IC2725G - WiMAX RF LDMOS Wideband Integrated Power Amplifier RoHS: Compliant Status: Obsolete Min Qty: 1 1716
  • 25 $56.3600
  • 100 $53.5400
  • 500 $50.7200
  • 1,000 $47.9100
  • 10,000 $45.0900
$45.0900 / $56.3600 Buy Now
DISTI # MW7IC2725GNR1
Avnet Silica Transistor RF FET 65V 2300MHz to 2700MHz 16Pin TO270WB TR (Alt: MW7IC2725GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Silica - 0
Buy Now
DISTI # MW7IC2725GNR1
EBV Elektronik Transistor RF FET 65V 2300MHz to 2700MHz 16Pin TO270WB TR (Alt: MW7IC2725GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 EBV - 0
Buy Now

Part Details for MW7IC2725GNR1

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MW7IC2725GNR1 Part Data Attributes

MW7IC2725GNR1 NXP Semiconductors
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MW7IC2725GNR1 NXP Semiconductors 2300MHz - 2700MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT, PLASTIC, CASE 1887-01, TO-270, WB-16
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.33.00.01
Samacsys Manufacturer NXP
Characteristic Impedance 50 Ω
Construction COMPONENT
Gain 25.5 dB
Input Power-Max (CW) 22 dBm
JESD-609 Code e3
Number of Functions 1
Operating Frequency-Max 2700 MHz
Operating Frequency-Min 2300 MHz
Package Body Material PLASTIC/EPOXY
Package Equivalence Code FLNG,.67"H.SPACE
Power Supplies 28 V
RF/Microwave Device Type NARROW BAND HIGH POWER
Technology MOS
Terminal Finish Tin (Sn)
VSWR-Max 10

Alternate Parts for MW7IC2725GNR1

This table gives cross-reference parts and alternative options found for MW7IC2725GNR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MW7IC2725GNR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MW7IC18100NR1 NXP Semiconductors Check for Price 1805MHz - 2050MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER MW7IC2725GNR1 vs MW7IC18100NR1
MW5IC2030MBR1 Freescale Semiconductor Check for Price IC,RF AMPLIFIER,SINGLE,FLANGE MT,PLASTIC MW7IC2725GNR1 vs MW5IC2030MBR1
MW6IC2015GNBR1 Freescale Semiconductor Check for Price 1805 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329A-04, WB-16 GULL, TO-272, 16 PIN MW7IC2725GNR1 vs MW6IC2015GNBR1
MWIC930R1 Freescale Semiconductor Check for Price IC,RF AMPLIFIER,SINGLE,MOS,FLANGE MT,PLASTIC MW7IC2725GNR1 vs MWIC930R1
MHL19936N Freescale Semiconductor Check for Price 1900 MHz - 2000 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, LEAD FREE, CASE 301AY-01, 5 PIN MW7IC2725GNR1 vs MHL19936N
MW4IC915NBR1 NXP Semiconductors Check for Price 860MHz - 960MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER MW7IC2725GNR1 vs MW4IC915NBR1
MW7IC2240GNR1 NXP Semiconductors Check for Price 2000MHz - 2200MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER MW7IC2725GNR1 vs MW7IC2240GNR1
MHVIC915NR2 Freescale Semiconductor Check for Price 746 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, PLASTIC, CASE 978-03, FP-16 MW7IC2725GNR1 vs MHVIC915NR2
MHVIC2114NR2 Freescale Semiconductor Check for Price 1600 MHz - 2600 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 978-03, FP-16 MW7IC2725GNR1 vs MHVIC2114NR2
MD7IC2755NR1 NXP Semiconductors Check for Price 2500MHz - 2700MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER MW7IC2725GNR1 vs MD7IC2755NR1

MW7IC2725GNR1 Related Parts

MW7IC2725GNR1 Frequently Asked Questions (FAQ)

  • A good PCB layout should ensure minimal thermal resistance, use thermal vias, and keep the device away from heat sources. A heat sink or thermal pad can be used to dissipate heat. Consult NXP's application notes for specific guidance.

  • Optimize the device's operating frequency, use power-saving modes, and minimize the voltage supply. Implement a power management strategy, such as dynamic voltage and frequency scaling, to reduce power consumption.

  • Consult the datasheet for recommended voltage regulator settings. Typically, the internal regulators are set to provide 1.2V or 1.35V for the core and 2.5V or 3.3V for the I/O. Adjust these settings based on your specific application requirements.

  • Follow NXP's EMC guidelines, use a multi-layer PCB, and implement proper grounding and shielding techniques. Ensure that your design meets the relevant EMC standards and regulations.

  • Use a high-quality clock source, such as a crystal oscillator, and ensure proper clock signal routing and termination. Implement clock domain crossing (CDC) techniques to minimize clock skew and jitter.

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