Part Details for MW6S010GNR1 by Freescale Semiconductor
Results Overview of MW6S010GNR1 by Freescale Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MW6S010GNR1 Information
MW6S010GNR1 by Freescale Semiconductor is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MW6S010GNR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 8 |
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RFQ | ||
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Vyrian | Transistors | 115 |
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RFQ |
Part Details for MW6S010GNR1
MW6S010GNR1 CAD Models
MW6S010GNR1 Part Data Attributes
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MW6S010GNR1
Freescale Semiconductor
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Datasheet
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MW6S010GNR1
Freescale Semiconductor
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA, ROHS COMPLIANT, PLASTIC, CASE 1265A-03, 2 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
| Part Package Code | SOIC | |
| Package Description | ROHS COMPLIANT, PLASTIC, CASE 1265A-03, 2 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE 1265A-03 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 68 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JEDEC-95 Code | TO-270BA | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 61.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MW6S010GNR1
This table gives cross-reference parts and alternative options found for MW6S010GNR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MW6S010GNR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MW6S010GNR1 | NXP Semiconductors | $20.6126 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA | MW6S010GNR1 vs MW6S010GNR1 |
| MW6S010NR1 | NXP Semiconductors | $21.3242 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA | MW6S010GNR1 vs MW6S010NR1 |
| MW6S010GMR1 | Freescale Semiconductor | Check for Price | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, CASE 1265A-02, TO-270, 2 PIN | MW6S010GNR1 vs MW6S010GMR1 |
MW6S010GNR1 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the MW6S010GNR1 is 6 GHz.
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The typical noise figure of the MW6S010GNR1 is 1.5 dB.
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The maximum power consumption of the MW6S010GNR1 is 250 mA.
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The operating voltage range of the MW6S010GNR1 is 3.3V to 5V.
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The MW6S010GNR1 is a GaN (Gallium Nitride) device.