Part Details for MV2N5116 by Microchip Technology Inc
Results Overview of MV2N5116 by Microchip Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MV2N5116 Information
MV2N5116 by Microchip Technology Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MV2N5116
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MV2N5116-ND
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DigiKey | JFET P-CH 30V TO18 Lead time: 52 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
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NAC | JFETs RoHS: Compliant Min Qty: 100 Package Multiple: 1 | 0 |
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RFQ |
Part Details for MV2N5116
MV2N5116 CAD Models
MV2N5116 Part Data Attributes
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MV2N5116
Microchip Technology Inc
Buy Now
Datasheet
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MV2N5116
Microchip Technology Inc
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | TO-18, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Samacsys Manufacturer | Microchip | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 30 V | |
Drain-source On Resistance-Max | 175 Ω | |
FET Technology | JUNCTION | |
Feedback Cap-Max (Crss) | 7 pF | |
JEDEC-95 Code | TO-206AA | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 0.5 W | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500 | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for MV2N5116
This table gives cross-reference parts and alternative options found for MV2N5116. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MV2N5116, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N5116-PBF | Digitron Semiconductors | Check for Price | Small Signal Field-Effect Transistor | MV2N5116 vs 2N5116-PBF |
2N5116 | Advanced Semiconductor Inc | Check for Price | 2N5116 | MV2N5116 vs 2N5116 |
JANTX2N5116 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA, TO-18, 3 PIN | MV2N5116 vs JANTX2N5116 |
2N5116 | New England Semiconductor | Check for Price | 2N5116, | MV2N5116 vs 2N5116 |
2N5116 | Microchip Technology Inc | Check for Price | Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA | MV2N5116 vs 2N5116 |
2N5116 | Central Semiconductor Corp | Check for Price | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, | MV2N5116 vs 2N5116 |
2N5116 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA, TO-18, 3 PIN | MV2N5116 vs 2N5116 |
JANTXV2N5116 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, P-Channel, Junction FET, | MV2N5116 vs JANTXV2N5116 |
2N5116E3 | Microsemi Corporation | Check for Price | Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA, ROHS COMPLIANT, TO-18, 3 PIN | MV2N5116 vs 2N5116E3 |
JANTX2N5116 | Microsemi Corporation | Check for Price | Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA, TO-18, 3 PIN | MV2N5116 vs JANTX2N5116 |
MV2N5116 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the MV2N5116 is 100 MHz.
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The typical propagation delay of the MV2N5116 is 2.5 ns.
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Yes, the MV2N5116 is 5V tolerant, making it suitable for use in mixed-voltage systems.
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The power consumption of the MV2N5116 is typically 10 μA at 1.8V and 100 kHz.
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Yes, the MV2N5116 has built-in ESD protection, which helps protect the device from damage caused by electrostatic discharge.