Part Details for MUR10060CTR by GeneSic Semiconductor Inc
Results Overview of MUR10060CTR by GeneSic Semiconductor Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
MUR10060CTR Information
MUR10060CTR by GeneSic Semiconductor Inc is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for MUR10060CTR
| Part # | Distributor | Description | Stock | Price | Buy | |
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NAC | Silicon Super Fast Recovery Rectifier - 50V/200A RoHS: Compliant Min Qty: 25 Package Multiple: 25 | 0 |
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RFQ |
Part Details for MUR10060CTR
MUR10060CTR CAD Models
MUR10060CTR Part Data Attributes
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MUR10060CTR
GeneSic Semiconductor Inc
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Datasheet
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MUR10060CTR
GeneSic Semiconductor Inc
600V 100A Silicon Super Fast Recovery Rectifier in Twin Tower Package
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | GENESIC SEMICONDUCTOR INC | |
| Package Description | R-PUFM-X2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Application | SUPER FAST RECOVERY | |
| Case Connection | ANODE | |
| Configuration | COMMON ANODE, 2 ELEMENTS | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1.7 V | |
| JESD-30 Code | R-PUFM-X2 | |
| Non-rep Pk Forward Current-Max | 1500 A | |
| Number of Elements | 2 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 50 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Rep Pk Reverse Voltage-Max | 600 V | |
| Reverse Current-Max | 25 µA | |
| Reverse Recovery Time-Max | 0.11 µs | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
MUR10060CTR Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves placing the device on a thermal pad with a minimum size of 50mm x 50mm, and using multiple vias to connect the thermal pad to the ground plane. Additionally, it is recommended to keep the thermal pad away from high-frequency signal traces and to use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K.
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To ensure reliable operation at high temperatures, it is recommended to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, it is important to ensure good thermal design and heat sinking, and to monitor the device's junction temperature using the built-in thermal sensing diode.
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The recommended gate drive voltage for the MUR10060CTR is between 10V and 15V, with a current capability of at least 1A. The gate drive voltage and current should be adjusted based on the specific application requirements and the device's operating conditions.
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To protect the device from overvoltage and overcurrent conditions, it is recommended to use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. The OVP circuit should be designed to clamp the voltage at a level below the device's maximum rated voltage, and the OCP circuit should be designed to limit the current to a level below the device's maximum rated current.
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The recommended storage and handling procedure for the MUR10060CTR involves storing the device in a dry, cool place away from direct sunlight and moisture. The device should be handled with care to avoid mechanical stress, and it should be stored in its original packaging or a similar anti-static package to prevent electrostatic discharge (ESD) damage.