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Part Details for MUN5233DW1T1G by onsemi
Results Overview of MUN5233DW1T1G by onsemi
- Distributor Offerings: (28 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Security and Surveillance
Audio and Video Systems
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
MUN5233DW1T1G Information
MUN5233DW1T1G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MUN5233DW1T1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26K4683
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Newark | Brt Transistor, 50V, 47K/4.7Kohm, Sot363, Transistor Polarity:Dual Npn, Collector Emitter Voltage Max Npn:50V, Collector Emitter Voltage Max Pnp:-, Continuous Collector Current:100Ma, Base Input Resistor R1:4.7Kohm, No. Of Pins:6 Pinrohs Compliant: Yes |Onsemi MUN5233DW1T1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1150 |
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$0.0100 | Buy Now |
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DISTI #
33X3892
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Newark | Bipolar Pre-Biased/Digital Transistor, Brt, 50 V, 100 Ma, 4.7 Kohm, 47 Kohm, 0.1, Sot-363 |Onsemi MUN5233DW1T1G RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0380 / $0.0610 | Buy Now |
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DISTI #
MUN5233DW1T1GOSCT-ND
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DigiKey | TRANS PREBIAS 2NPN 50V SOT-363 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
2446 In Stock |
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$0.0291 / $0.2600 | Buy Now |
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DISTI #
MUN5233DW1T1G
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Avnet Americas | Digital Transistor, Dual NPN, 50 V, 100 mA, 4.7 kOhm, 47 kOhm, SC-88 (SOT-363), 6 Pins - Tape and Reel (Alt: MUN5233DW1T1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel | 3000 |
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$0.0291 / $0.0311 | Buy Now |
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DISTI #
26K4683
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Avnet Americas | Digital Transistor, Dual NPN, 50 V, 100 mA, 4.7 kOhm, 47 kOhm, SC-88 (SOT-363), 6 Pins - Product that comes on tape, but is not reeled (Alt: 26K4683) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 1 Days Container: Ammo Pack | 1150 Partner Stock |
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$0.0700 | Buy Now |
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DISTI #
863-MUN5233DW1T1G
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Mouser Electronics | Digital Transistors 100mA 50V BRT Dual NPN RoHS: Compliant | 12858 |
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$0.0330 / $0.2500 | Buy Now |
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DISTI #
V36:1790_07322606
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Arrow Electronics | Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks Date Code: 2422 | Americas - 33000 |
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$0.0279 / $0.0370 | Buy Now |
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DISTI #
E02:0323_00077666
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Arrow Electronics | Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks Date Code: 2417 | Europe - 6000 |
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$0.0298 / $0.0443 | Buy Now |
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DISTI #
V72:2272_07322606
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Arrow Electronics | Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks Date Code: 2224 Container: Cut Strips | Americas - 79 |
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$0.0670 / $0.2122 | Buy Now |
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Future Electronics | MUN Series 50V 100 mA 4.7 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363 RoHS: Compliant pbFree: Yes Min Qty: 33000 Package Multiple: 3000 Lead time: 11 Weeks Container: Reel | 0Reel |
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$0.0293 / $0.0316 | Buy Now |
Part Details for MUN5233DW1T1G
MUN5233DW1T1G CAD Models
MUN5233DW1T1G Part Data Attributes
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MUN5233DW1T1G
onsemi
Buy Now
Datasheet
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Compare Parts:
MUN5233DW1T1G
onsemi
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SC-88/SC70-6/SOT-363 6 LEAD | |
| Pin Count | 6 | |
| Manufacturer Package Code | 419B-02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks, 1 Day | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 10 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 80 | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.385 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MUN5233DW1T1G
This table gives cross-reference parts and alternative options found for MUN5233DW1T1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MUN5233DW1T1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MUN5233DW1T1 | Motorola Mobility LLC | Check for Price | 100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR | MUN5233DW1T1G vs MUN5233DW1T1 |
| MUN5233DW1T1 | LRC Leshan Radio Co Ltd | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon | MUN5233DW1T1G vs MUN5233DW1T1 |
MUN5233DW1T1G Frequently Asked Questions (FAQ)
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A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduces thermal resistance.
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Ensure that the device is operated within the recommended temperature range (−40°C to +150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
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A reflow soldering profile with a peak temperature of 260°C and a dwell time of 20-30 seconds is recommended. Avoid exceeding 280°C to prevent damage to the device.
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Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Ensure that the ESD protection devices are rated for the maximum voltage and current of the application.
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Store the device in a dry, cool place away from direct sunlight. Handle the device by the body, avoiding touching the leads or pins. Use anti-static packaging and handling materials to prevent ESD damage.