Part Details for MUN5231T1 by onsemi
Results Overview of MUN5231T1 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MUN5231T1 Information
MUN5231T1 by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MUN5231T1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Small Signal Bipolar Transistor, 0.1A, 50V, NPN RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 4250 |
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$0.0410 / $0.0661 | Buy Now |
Part Details for MUN5231T1
MUN5231T1 CAD Models
MUN5231T1 Part Data Attributes
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MUN5231T1
onsemi
Buy Now
Datasheet
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MUN5231T1
onsemi
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SC-70 | |
Package Description | CASE 419-04, SC-70, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | CASE 419-04 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 8 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
MUN5231T1 Frequently Asked Questions (FAQ)
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A good PCB layout for the MUN5231T1 should prioritize thermal dissipation. Place the device near a thermal pad or a heat sink, and ensure good copper coverage around the device. Use thermal vias to connect the top and bottom layers, and avoid routing high-current traces near the device.
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To ensure reliable operation at high temperatures, follow the recommended operating conditions, and consider derating the device's power dissipation. Implement a thermal management system, such as a heat sink or fan, to keep the junction temperature below the maximum rating. Monitor the device's temperature and adjust the system design accordingly.
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The MUN5231T1's high voltage rating requires careful PCB design to prevent electrical overstress. Ensure a sufficient creepage distance between high-voltage traces and other conductive elements. Use a suitable PCB material with high dielectric strength, and consider adding guard rings or electrostatic discharge (ESD) protection devices.
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Choose an input capacitor with a high voltage rating, low equivalent series resistance (ESR), and a suitable capacitance value. The capacitor should be able to handle the maximum input voltage and ripple current. Consider using a ceramic or film capacitor with a voltage rating at least 1.5 times the maximum input voltage.
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To minimize EMI and ensure EMC, follow good design practices such as using a shielded enclosure, keeping high-frequency traces short, and using EMI filters or common-mode chokes. Ensure the system meets the relevant regulatory standards, such as CISPR or FCC, and perform EMI testing to validate the design.