Datasheets
MUN5231T1 by:

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN

Part Details for MUN5231T1 by onsemi

Results Overview of MUN5231T1 by onsemi

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MUN5231T1 Information

MUN5231T1 by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MUN5231T1

Part # Distributor Description Stock Price Buy
Rochester Electronics Small Signal Bipolar Transistor, 0.1A, 50V, NPN RoHS: Not Compliant Status: Obsolete Min Qty: 1 4250
  • 100 $0.0661
  • 500 $0.0595
  • 1,000 $0.0549
  • 10,000 $0.0489
  • 100,000 $0.0410
$0.0410 / $0.0661 Buy Now

Part Details for MUN5231T1

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MUN5231T1 Part Data Attributes

MUN5231T1 onsemi
Buy Now Datasheet
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MUN5231T1 onsemi 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SC-70
Package Description CASE 419-04, SC-70, 3 PIN
Pin Count 3
Manufacturer Package Code CASE 419-04
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature BUILT IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 8
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

MUN5231T1 Related Parts

MUN5231T1 Frequently Asked Questions (FAQ)

  • A good PCB layout for the MUN5231T1 should prioritize thermal dissipation. Place the device near a thermal pad or a heat sink, and ensure good copper coverage around the device. Use thermal vias to connect the top and bottom layers, and avoid routing high-current traces near the device.

  • To ensure reliable operation at high temperatures, follow the recommended operating conditions, and consider derating the device's power dissipation. Implement a thermal management system, such as a heat sink or fan, to keep the junction temperature below the maximum rating. Monitor the device's temperature and adjust the system design accordingly.

  • The MUN5231T1's high voltage rating requires careful PCB design to prevent electrical overstress. Ensure a sufficient creepage distance between high-voltage traces and other conductive elements. Use a suitable PCB material with high dielectric strength, and consider adding guard rings or electrostatic discharge (ESD) protection devices.

  • Choose an input capacitor with a high voltage rating, low equivalent series resistance (ESR), and a suitable capacitance value. The capacitor should be able to handle the maximum input voltage and ripple current. Consider using a ceramic or film capacitor with a voltage rating at least 1.5 times the maximum input voltage.

  • To minimize EMI and ensure EMC, follow good design practices such as using a shielded enclosure, keeping high-frequency traces short, and using EMI filters or common-mode chokes. Ensure the system meets the relevant regulatory standards, such as CISPR or FCC, and perform EMI testing to validate the design.

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