Datasheets
MTP12P10 by:

Power MOSFET 12 Amps, 100 Volts, P Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE

Part Details for MTP12P10 by onsemi

Results Overview of MTP12P10 by onsemi

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Applications Automotive

MTP12P10 Information

MTP12P10 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MTP12P10

Part # Distributor Description Stock Price Buy
Bristol Electronics   387
RFQ
Bristol Electronics   21
RFQ

Part Details for MTP12P10

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MTP12P10 Part Data Attributes

MTP12P10 onsemi
Buy Now Datasheet
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MTP12P10 onsemi Power MOSFET 12 Amps, 100 Volts, P Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-220 3 LEAD STANDARD
Package Description CASE 221A-09, 3 PIN
Pin Count 3
Manufacturer Package Code 221A
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTP12P10

This table gives cross-reference parts and alternative options found for MTP12P10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP12P10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MTP12P10 Motorola Mobility LLC Check for Price 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB MTP12P10 vs MTP12P10
Part Number Manufacturer Composite Price Description Compare
RFP12P10 Harris Semiconductor Check for Price Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB MTP12P10 vs RFP12P10
MTP12P10G onsemi Check for Price Power MOSFET 12 Amps, 100 Volts, P Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE MTP12P10 vs MTP12P10G
MTP12P10 Rochester Electronics LLC Check for Price 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN MTP12P10 vs MTP12P10
RFP12P10 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB MTP12P10 vs RFP12P10
MTP12P10G Rochester Electronics LLC Check for Price 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN MTP12P10 vs MTP12P10G
RFP12P10 Intersil Corporation Check for Price 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB MTP12P10 vs RFP12P10

MTP12P10 Related Parts

MTP12P10 Frequently Asked Questions (FAQ)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the package.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal contact between the device and the heat sink. Additionally, consider using a thermal interface material to reduce thermal resistance.

  • Exceeding the maximum junction temperature can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.

  • To handle ESD protection for the MTP12P10, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design. Additionally, consider using ESD-protected devices and components in the surrounding circuitry.

  • The recommended soldering conditions for the MTP12P10 involve using a soldering temperature of 260°C (max) for a maximum of 10 seconds. It's also essential to use a soldering iron with a temperature-controlled tip and to avoid applying excessive force or pressure during the soldering process.

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