Part Details for MTD6N20ET4 by Rochester Electronics LLC
Results Overview of MTD6N20ET4 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MTD6N20ET4 Information
MTD6N20ET4 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MTD6N20ET4
MTD6N20ET4 CAD Models
MTD6N20ET4 Part Data Attributes
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MTD6N20ET4
Rochester Electronics LLC
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Datasheet
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MTD6N20ET4
Rochester Electronics LLC
6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD6N20ET4
This table gives cross-reference parts and alternative options found for MTD6N20ET4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD6N20ET4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MTD6N20ET4G | onsemi | Check for Price | Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | MTD6N20ET4 vs MTD6N20ET4G |
| MTD6N20E-T4 | onsemi | Check for Price | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | MTD6N20ET4 vs MTD6N20E-T4 |
| MTD5N25ET4 | Rochester Electronics LLC | Check for Price | 5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | MTD6N20ET4 vs MTD5N25ET4 |
| MTD6N20ET4 | Motorola Mobility LLC | Check for Price | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET | MTD6N20ET4 vs MTD6N20ET4 |
| MTD6N20E-T4 | Rochester Electronics LLC | Check for Price | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | MTD6N20ET4 vs MTD6N20E-T4 |
| MTD5N25E | onsemi | Check for Price | 5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | MTD6N20ET4 vs MTD5N25E |
| MTD6N20E | onsemi | Check for Price | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | MTD6N20ET4 vs MTD6N20E |