Part Details for MTD3055VLT4 by onsemi
Results Overview of MTD3055VLT4 by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
MTD3055VLT4 Information
MTD3055VLT4 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MTD3055VLT4
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2491 |
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Bristol Electronics | 193 |
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Bristol Electronics | Min Qty: 5 | 13 |
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$1.1250 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,12A I(D),TO-252 | 154 |
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$1.0750 / $2.1500 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,12A I(D),TO-252 | 52 |
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$1.0440 / $1.7400 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,12A I(D),TO-252 | 25 |
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$0.7500 / $1.2500 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,12A I(D),TO-252 | 10 |
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$1.2000 / $1.5000 | Buy Now |
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ComSIT USA | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Not Compliant |
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Win Source Electronics | Power MOSFET 12 Amps, 60 Volts | 7045 |
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$3.4320 / $5.1480 | Buy Now |
Part Details for MTD3055VLT4
MTD3055VLT4 CAD Models
MTD3055VLT4 Part Data Attributes
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MTD3055VLT4
onsemi
Buy Now
Datasheet
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Compare Parts:
MTD3055VLT4
onsemi
12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | CASE 369C-01, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 369C-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 72 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD3055VLT4
This table gives cross-reference parts and alternative options found for MTD3055VLT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD3055VLT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MTD3055VL1 | onsemi | Check for Price | TRANSISTOR 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power | MTD3055VLT4 vs MTD3055VL1 |
MTD3055VLT4 Frequently Asked Questions (FAQ)
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A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device. It's also important to monitor the device's temperature and adjust the operating conditions accordingly.
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The MTD3055VLT4 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. This includes using an ESD wrist strap, ESD mat, or ESD bag, and avoiding touching the device's pins or leads.
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Yes, the MTD3055VLT4 is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive applications. However, it's essential to follow the recommended operating conditions, and to perform thorough testing and validation to ensure the device meets the specific requirements of the application.
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To troubleshoot issues with the MTD3055VLT4, start by reviewing the device's datasheet and application notes. Check the device's operating conditions, including voltage, current, and temperature. Use oscilloscopes or logic analyzers to monitor the device's signals and identify any anomalies. It's also recommended to consult with onsemi's technical support team or a qualified engineer for further assistance.