Datasheets
MTD3055VLT4 by:

12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

Part Details for MTD3055VLT4 by Motorola Mobility LLC

Results Overview of MTD3055VLT4 by Motorola Mobility LLC

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

MTD3055VLT4 Information

MTD3055VLT4 by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MTD3055VLT4

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MTD3055VLT4 Part Data Attributes

MTD3055VLT4 Motorola Mobility LLC
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MTD3055VLT4 Motorola Mobility LLC 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 72 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 48 W
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 42 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 120 ns
Turn-on Time-Max (ton) 210 ns

Alternate Parts for MTD3055VLT4

This table gives cross-reference parts and alternative options found for MTD3055VLT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD3055VLT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MTD3055VL1 onsemi Check for Price TRANSISTOR 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power MTD3055VLT4 vs MTD3055VL1
Part Number Manufacturer Composite Price Description Compare
MTD3055VL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 MTD3055VLT4 vs MTD3055VL
MTD3055VL_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 MTD3055VLT4 vs MTD3055VL_NL
MTD3055VL Rochester Electronics LLC Check for Price 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 MTD3055VLT4 vs MTD3055VL
MTD3055VL onsemi $0.7361 Power MOSFET 12A, 60V, DPAK-3 / TO-252-3, 2500-REEL MTD3055VLT4 vs MTD3055VL
MTD3055VL Motorola Mobility LLC Check for Price 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 MTD3055VLT4 vs MTD3055VL

MTD3055VLT4 Related Parts

MTD3055VLT4 Frequently Asked Questions (FAQ)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for airflow.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a heat sink or thermal pad, and implement thermal management techniques such as reducing power consumption or using a fan.

  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability.

  • To troubleshoot issues related to the internal voltage regulator, check the input voltage, output voltage, and current consumption. Verify that the input voltage is within the recommended range, and ensure that the output voltage is stable and within the specified tolerance. Also, check for any signs of overheating or excessive current draw.

  • To prevent electrostatic discharge (ESD) damage, handle the device with anti-static wrist straps, mats, or bags. Store the device in anti-static packaging, and avoid touching the pins or leads. Follow proper ESD handling and storage procedures to prevent damage.

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