Part Details for MTD2N50ET4 by onsemi
Results Overview of MTD2N50ET4 by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MTD2N50ET4 Information
MTD2N50ET4 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MTD2N50ET4
MTD2N50ET4 CAD Models
MTD2N50ET4 Part Data Attributes
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MTD2N50ET4
onsemi
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Datasheet
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MTD2N50ET4
onsemi
2A, 500V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 369A-13 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 3.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD2N50ET4
This table gives cross-reference parts and alternative options found for MTD2N50ET4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD2N50ET4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MTD2N50 | Motorola Mobility LLC | Check for Price | 2A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | MTD2N50ET4 vs MTD2N50 |
| MTD2N50E | onsemi | Check for Price | 2A, 500V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 | MTD2N50ET4 vs MTD2N50E |
| MTD2N50E1 | onsemi | Check for Price | 2A, 500V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 | MTD2N50ET4 vs MTD2N50E1 |
| MTD2N50 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | MTD2N50ET4 vs MTD2N50 |
| MTD2N50E1 | Rochester Electronics LLC | Check for Price | 2A, 500V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 | MTD2N50ET4 vs MTD2N50E1 |