Part Details for MTD2N50ET4 by Motorola Mobility LLC
Results Overview of MTD2N50ET4 by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MTD2N50ET4 Information
MTD2N50ET4 by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MTD2N50ET4
MTD2N50ET4 CAD Models
MTD2N50ET4 Part Data Attributes
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MTD2N50ET4
Motorola Mobility LLC
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Datasheet
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MTD2N50ET4
Motorola Mobility LLC
2A, 500V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 3.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD2N50ET4
This table gives cross-reference parts and alternative options found for MTD2N50ET4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD2N50ET4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MTD2N50E | Rochester Electronics LLC | Check for Price | 2A, 500V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 | MTD2N50ET4 vs MTD2N50E |
MTD2N50ET4 Frequently Asked Questions (FAQ)
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A good PCB layout for the MTD2N50ET4 should include a large copper area for heat dissipation, with multiple vias to the heat sink. The drain and source pins should be connected to the copper area using wide traces. A thermal relief pattern can also be used to improve heat transfer.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device. Additionally, ensure good thermal management by using a heat sink, and consider using a thermal interface material to improve heat transfer. Monitor the device's junction temperature and adjust the operating conditions accordingly.
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Exceeding the maximum rated voltage of 500V can lead to permanent damage to the device, including gate oxide breakdown, junction breakdown, or even physical destruction. It's essential to ensure that the device operates within the recommended voltage range to prevent premature failure.
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To protect the MTD2N50ET4 from ESD, handle the device by the body or use an ESD wrist strap. Ensure that the PCB and assembly process are ESD-safe, and consider using ESD protection devices such as TVS diodes or ESD suppressors.
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A suitable gate drive circuit for the MTD2N50ET4 should provide a high current pulse (typically 1-2A) with a fast rise time (typically <10ns) to ensure fast switching. A gate resistor value between 10-50 ohms is recommended, and a gate-source voltage of 10-15V is typical.